Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SISS10DN-T1-GE3

SISS10DN-T1-GE3

SISS10DN-T1-GE3

Part NumberSISS10DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 40V 60A PPAK 1212-8S

DatasheetSiSS10DN

Package / CasePowerPAK® 1212-8S

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 40V 60A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3)

To learn about the specification of SISS10DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SISS10DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SISS10DN-T1-GE3.
We are offering SISS10DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SISS10DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SiSS10DN
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	2.65mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	75nC @ 10V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	3750pF @ 20V
FET Feature	-
Power Dissipation (Max)	57W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8S (3.3x3.3)
Package / Case	PowerPAK® 1212-8S

SISS10DN-T1-GE3 - Related Products

	STU6N60M2	STMicroelectronics, N-Channel 600V 4.5A (Tc) 60W (Tc) Through Hole I-PAK, MDmesh™ II Plus	View
	IRFB4615PBF	Infineon Technologies, N-Channel 150V 35A (Tc) 144W (Tc) Through Hole TO-220AB, HEXFET®	View
	BSR202NL6327HTSA1	Infineon Technologies, N-Channel 20V 3.8A (Ta) 500mW (Ta) Surface Mount PG-SC-59, OptiMOS™	View
	IPL60R185CFD7AUMA1	Infineon Technologies, N-Channel 650V 14A (Tc) 85W (Tc) Surface Mount PG-VSON-4, CoolMOS™ CFD7	View
	DMN32D2LFB4-7	Diodes Incorporated, N-Channel 30V 300mA (Ta) 350mW (Ta) Surface Mount X2-DFN1006-3,	View
	PSMN030-60YS,115	Nexperia USA Inc., N-Channel 60V 29A (Tc) 56W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	FDMS8622	ON Semiconductor, N-Channel 100V 4.8A (Ta), 16.5A (Tc) 2.5W (Ta), 31W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®	View
	DMN2011UFDF-7	Diodes Incorporated, N-Channel 20V 14.2A (Ta) 2.1W (Ta) Surface Mount U-DFN2020-6 (Type F),	View
	BUK9Y4R8-60E,115	Nexperia USA Inc., N-Channel 60V 100A (Tc) 238W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™	View
	IXFA3N120TRL	IXYS, N-Channel 1200V 3A (Tc) 200W (Tc) Surface Mount TO-263, HiPerFET™	View
	NVMFS5C673NLWFAFT1G	ON Semiconductor, N-Channel 60V 50A (Tc) 46W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),	View
	NTE4153NT1G	ON Semiconductor, N-Channel 20V 915mA (Ta) 300mW (Tj) Surface Mount SC-89-3,	View

SISS10DN-T1-GE3 - Tags

SISS10DN-T1-GE3 SISS10DN-T1-GE3 PDF SISS10DN-T1-GE3 datasheet SISS10DN-T1-GE3 specification SISS10DN-T1-GE3 image SISS10DN-T1-GE3 India Renesas Electronics India SISS10DN-T1-GE3 buy SISS10DN-T1-GE3 SISS10DN-T1-GE3 price SISS10DN-T1-GE3 distributor SISS10DN-T1-GE3 supplier SISS10DN-T1-GE3 wholesales