Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SISS08DN-T1-GE3

SISS08DN-T1-GE3

SISS08DN-T1-GE3

Part NumberSISS08DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN 25 V POWERPAK 1212

DatasheetSISS08DN

Package / CasePowerPAK® 1212-8S

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 25V 53.9A (Ta), 195.5A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3)

To learn about the specification of SISS08DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SISS08DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SISS08DN-T1-GE3.
We are offering SISS08DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SISS08DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SISS08DN
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25°C	53.9A (Ta), 195.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.23mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	82nC @ 10V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	3670pF @ 12.5V
FET Feature	-
Power Dissipation (Max)	5W (Ta), 65.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8S (3.3x3.3)
Package / Case	PowerPAK® 1212-8S

SISS08DN-T1-GE3 - Related Products

	IXTY1R6N100D2	IXYS, N-Channel 1000V 1.6A (Tc) 100W (Tc) Surface Mount TO-252, (D-Pak),	View
	IXFX64N60Q3	IXYS, N-Channel 600V 64A (Tc) 1250W (Tc) Through Hole PLUS247™-3, HiPerFET™	View
	IPL60R199CPAUMA1	Infineon Technologies, N-Channel 650V 16.4A (Tc) 139W (Tc) Surface Mount PG-VSON-4, CoolMOS™	View
	TSM60NB600CF C0G	Taiwan Semiconductor Corporation, N-Channel 600V 8A (Tc) 41.7W (Tc) Through Hole ITO-220S,	View
	IPAN80R280P7XKSA1	Infineon Technologies, N-Channel 800V 17A (Tc) 30W (Tc) Through Hole PG-TO220 Full Pack, CoolMOS™ P7	View
	BSC100N06LS3GATMA1	Infineon Technologies, N-Channel 60V 12A (Ta), 50A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount PG-TDSON-8-5, OptiMOS™	View
	RD3P050SNTL1	Rohm Semiconductor, N-Channel 100V 5A (Ta) 15W (Tc) Surface Mount TO-252,	View
	HUF75339P3	ON Semiconductor, N-Channel 55V 75A (Tc) 200W (Tc) Through Hole TO-220-3, UltraFET™	View
	IPP65R125C7XKSA1	Infineon Technologies, N-Channel 650V 18A (Tc) 101W (Tc) Through Hole PG-TO220-3, CoolMOS™ C7	View
	IRFR024TRLPBF	Vishay Siliconix, N-Channel 60V 14A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak,	View
	STD20NF20	STMicroelectronics, N-Channel 200V 18A (Tc) 110W (Tc) Surface Mount DPAK, STripFET™	View
	SI4134DY-T1-E3	Vishay Siliconix, N-Channel 30V 14A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount, TrenchFET®	View

SISS08DN-T1-GE3 - Tags

SISS08DN-T1-GE3 SISS08DN-T1-GE3 PDF SISS08DN-T1-GE3 datasheet SISS08DN-T1-GE3 specification SISS08DN-T1-GE3 image SISS08DN-T1-GE3 India Renesas Electronics India SISS08DN-T1-GE3 buy SISS08DN-T1-GE3 SISS08DN-T1-GE3 price SISS08DN-T1-GE3 distributor SISS08DN-T1-GE3 supplier SISS08DN-T1-GE3 wholesales