Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIS434DN-T1-GE3

SIS434DN-T1-GE3

SIS434DN-T1-GE3

Part NumberSIS434DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 40V 35A PPAK 1212-8

DatasheetSIS434DN

Package / CasePowerPAK® 1212-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 40V 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

To learn about the specification of SIS434DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIS434DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIS434DN-T1-GE3.
We are offering SIS434DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIS434DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIS434DN
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	7.6mOhm @ 16.2A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	40nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1530pF @ 20V
FET Feature	-
Power Dissipation (Max)	3.8W (Ta), 52W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8

SIS434DN-T1-GE3 - Related Products

	IXFP16N50P	IXYS, N-Channel 500V 16A (Tc) 300W (Tc) Through Hole TO-220AB, HiPerFET™, PolarHT™	View
	STD12N65M2	STMicroelectronics, N-Channel 650V 8A (Tc) 85W (Tc) Surface Mount DPAK, MDmesh™ M2	View
	DMN10H220LE-13	Diodes Incorporated, N-Channel 100V 2.3A (Ta) 1.8W (Ta) Surface Mount SOT-223,	View
	FDD18N20LZ	ON Semiconductor, N-Channel 200V 16A (Tc) 89W (Tc) Surface Mount D-Pak, UniFET™	View
	IPP80R450P7XKSA1	Infineon Technologies, N-Channel 800V 11A (Tc) 73W (Tc) Through Hole PG-TO220-3, CoolMOS™	View
	NTTFS5820NLTAG	ON Semiconductor, N-Channel 60V 11A (Ta), 37A (Tc) 2.7W (Ta), 33W (Tc) Surface Mount 8-WDFN (3.3x3.3),	View
	IRFR024NTRPBF	Infineon Technologies, N-Channel 55V 17A (Tc) 45W (Tc) Surface Mount D-Pak, HEXFET®	View
	DMTH4007LPSQ-13	Diodes Incorporated, N-Channel 40V 15.5A (Ta), 100A (Tc) 2.7W (Ta), 150W (Tc) Surface Mount PowerDI5060-8, Automotive, AEC-Q101	View
	BUK9Y4R4-40E,115	Nexperia USA Inc., N-Channel 40V 100A (Tc) 147W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™	View
	RS1E240BNTB	Rohm Semiconductor, N-Channel 30V 24A (Ta) 3W (Ta), 30W (Tc) Surface Mount 8-HSOP,	View
	FQD6N40CTM	ON Semiconductor, N-Channel 400V 4.5A (Tc) 2.5W (Ta), 48W (Tc) Surface Mount D-Pak, QFET®	View
	STB34N50DM2AG	STMicroelectronics, N-Channel 500V 26A (Tc) 190W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, MDmesh™ DM2	View

SIS434DN-T1-GE3 - Tags

SIS434DN-T1-GE3 SIS434DN-T1-GE3 PDF SIS434DN-T1-GE3 datasheet SIS434DN-T1-GE3 specification SIS434DN-T1-GE3 image SIS434DN-T1-GE3 India Renesas Electronics India SIS434DN-T1-GE3 buy SIS434DN-T1-GE3 SIS434DN-T1-GE3 price SIS434DN-T1-GE3 distributor SIS434DN-T1-GE3 supplier SIS434DN-T1-GE3 wholesales