Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIS434DN-T1-GE3

SIS434DN-T1-GE3

SIS434DN-T1-GE3

Part NumberSIS434DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 40V 35A PPAK 1212-8

DatasheetSIS434DN

Package / CasePowerPAK® 1212-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 40V 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

To learn about the specification of SIS434DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIS434DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIS434DN-T1-GE3.
We are offering SIS434DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIS434DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIS434DN
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	7.6mOhm @ 16.2A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	40nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1530pF @ 20V
FET Feature	-
Power Dissipation (Max)	3.8W (Ta), 52W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8

SIS434DN-T1-GE3 - Related Products

	IRFR210TRLPBF	Vishay Siliconix, N-Channel 200V 2.6A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak,	View
	2N7002BKMB,315	Nexperia USA Inc., N-Channel 60V 450mA (Ta) 360mW (Ta) Surface Mount DFN1006B-3,	View
	APT58M80J	Microsemi Corporation, N-Channel 800V 60W (Tc) 960W (Tc) Chassis Mount SOT-227,	View
	SI2302CDS-T1-E3	Vishay Siliconix, N-Channel 20V 2.6A (Ta) 710mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	BSC057N03MSGATMA1	Infineon Technologies, N-Channel 30V 15A (Ta), 71A (Tc) 2.5W (Ta), 45W (Tc) Surface Mount PG-TDSON-8-5, OptiMOS™	View
	SIR188DP-T1-RE3	Vishay Siliconix, N-Channel 60V 25.5A (Ta), 60A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV	View
	SQD40N10-25_GE3	Vishay Siliconix, N-Channel 100V 40A (Tc) 136W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®	View
	IXFR80N50Q3	IXYS, N-Channel 500V 50A (Tc) 570W (Tc) Through Hole ISOPLUS247™, HiPerFET™	View
	PSMN7R5-60YLX	Nexperia USA Inc., N-Channel 60V 86A (Tc) 147W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	TSM70N900CP ROG	Taiwan Semiconductor Corporation, N-Channel 700V 4.5A (Tc) 50W (Tc) Surface Mount TO-252, (D-Pak),	View
	NTK3134NT1G	ON Semiconductor, N-Channel 20V 750mA (Ta) 310mW (Ta) Surface Mount SOT-723,	View
	FQU5N60CTU	ON Semiconductor, N-Channel 600V 2.8A (Tc) 2.5W (Ta), 49W (Tc) Through Hole I-PAK, QFET®	View

SIS434DN-T1-GE3 - Tags

SIS434DN-T1-GE3 SIS434DN-T1-GE3 PDF SIS434DN-T1-GE3 datasheet SIS434DN-T1-GE3 specification SIS434DN-T1-GE3 image SIS434DN-T1-GE3 India Renesas Electronics India SIS434DN-T1-GE3 buy SIS434DN-T1-GE3 SIS434DN-T1-GE3 price SIS434DN-T1-GE3 distributor SIS434DN-T1-GE3 supplier SIS434DN-T1-GE3 wholesales