SIRC18DP-T1-GE3

Part NumberSIRC18DP-T1-GE3

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIRC18DP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.1mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	111nC @ 10V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	5060pF @ 15V
FET Feature	Schottky Diode (Body)
Power Dissipation (Max)	54.3W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

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SI4122DY-T1-GE3	Vishay Siliconix, N-Channel 40V 27.2A (Tc) 3W (Ta), 6W (Tc) Surface Mount 8-SO, TrenchFET®	View
STD7N60M2	STMicroelectronics, N-Channel 600V 5A (Tc) 60W (Tc) Surface Mount DPAK, MDmesh™ II Plus	View
BSC030N04NSGATMA1	Infineon Technologies, N-Channel 40V 23A (Ta), 100A (Tc) 2.5W (Ta), 83W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™	View