Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SISH410DN-T1-GE3

SISH410DN-T1-GE3

SISH410DN-T1-GE3

Part NumberSISH410DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN PPAK 1212-8SH

DatasheetSISH410DN

Package / CasePowerPAK® 1212-8SH

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 20V 22A (Ta), 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH

To learn about the specification of SISH410DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SISH410DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SISH410DN-T1-GE3.
We are offering SISH410DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SISH410DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SISH410DN
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	22A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	41nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1600pF @ 10V
FET Feature	-
Power Dissipation (Max)	3.8W (Ta), 52W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8SH
Package / Case	PowerPAK® 1212-8SH

SISH410DN-T1-GE3 - Related Products

	IRFRC20TRPBF	Vishay Siliconix, N-Channel 600V 2A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak,	View
	IPD65R225C7ATMA1	Infineon Technologies, N-Channel 650V 11A (Tc) 63W (Tc) Surface Mount PG-TO252-3, CoolMOS™ C7	View
	IPS70R900P7SAKMA1	Infineon Technologies, N-Channel 700V 6A (Tc) 30.5W (Tc) Through Hole PG-TO251-3, CoolMOS™ P7	View
	FDC8878	ON Semiconductor, N-Channel 30V 8A (Ta), 8A (Tc) 1.6W (Ta) Surface Mount SuperSOT™-6, PowerTrench®	View
	RFD14N05L	ON Semiconductor, N-Channel 50V 14A (Tc) 48W (Tc) Through Hole I-PAK,	View
	STD11N50M2	STMicroelectronics, N-Channel 500V 8A (Tc) 85W (Tc) Surface Mount DPAK, MDmesh™ II Plus	View
	AOD508	Alpha & Omega Semiconductor Inc., N-Channel 30V 22A (Ta), 70A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount TO-252, (D-Pak),	View
	PSMN017-30BL,118	Nexperia USA Inc., N-Channel 30V 32A (Tc) 47W (Tc) Surface Mount D2PAK,	View
	2N7002W	ON Semiconductor, N-Channel 60V 115mA (Ta) 200mW (Ta) Surface Mount SC-70 (SOT323),	View
	STFW2N105K5	STMicroelectronics, N-Channel 1050V 2A (Tc) 30W (Tc) Through Hole ISOWATT-218FX, SuperMESH5™	View
	SIR826ADP-T1-GE3	Vishay Siliconix, N-Channel 80V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	STL260N3LLH6	STMicroelectronics, N-Channel 30V 260A (Tc) 166W (Tc) Surface Mount PowerFlat™ (5x6), STripFET™ H6	View

SISH410DN-T1-GE3 - Tags

SISH410DN-T1-GE3 SISH410DN-T1-GE3 PDF SISH410DN-T1-GE3 datasheet SISH410DN-T1-GE3 specification SISH410DN-T1-GE3 image SISH410DN-T1-GE3 India Renesas Electronics India SISH410DN-T1-GE3 buy SISH410DN-T1-GE3 SISH410DN-T1-GE3 price SISH410DN-T1-GE3 distributor SISH410DN-T1-GE3 supplier SISH410DN-T1-GE3 wholesales