SISH129DN-T1-GE3
SISH129DN-T1-GE3
Part Number SISH129DN-T1-GE3
Description MOSFET P-CHAN 30V POWERPAK 1212-
Package / Case PowerPAK® 1212-8SH
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description P-Channel 30V 14.4A (Ta), 35A (Tc) 3.8W (Ta), 52.1W (Tc) Surface Mount PowerPAK® 1212-8SH
To learn about the specification of SISH129DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SISH129DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SISH129DN-T1-GE3.
We are offering SISH129DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SISH129DN-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SISH129DN
Standard Package 1
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 14.4A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 11.4mOhm @ 14.4A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 71nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3345pF @ 15V
FET Feature -
Power Dissipation (Max) 3.8W (Ta), 52.1W (Tc)
Operating Temperature -50°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8SH
Package / Case PowerPAK® 1212-8SH
SISH129DN-T1-GE3 - Related ProductsMore >>
SI7117DN-T1-GE3
Vishay Siliconix, P-Channel 150V 2.17A (Tc) 3.2W (Ta), 12.5W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®
View
STS5P3LLH6
STMicroelectronics, P-Channel 30V 5A (Ta) 2.7W (Ta) Surface Mount 8-SO, DeepGATE™, STripFET™ H6
View
IPD042P03L3GATMA1
Infineon Technologies, P-Channel 30V 70A (Tc) 150W (Tc) Surface Mount PG-TO252-3, OptiMOS™
View
IXTP10P50P
IXYS, P-Channel 500V 10A (Tc) 300W (Tc) Through Hole TO-220AB, PolarP™
View
PMFPB8032XP,115
Nexperia USA Inc., P-Channel 20V 2.7A (Ta) 485mW (Ta), 6.25W (Tc) Surface Mount 6-HUSON-EP (2x2),
View
TSM3481CX6 RFG
Taiwan Semiconductor Corporation, P-Channel 30V 5.7A (Ta) 1.6W (Ta) Surface Mount SOT-26,
View
IXTK40P50P
IXYS, P-Channel 500V 40A (Tc) 890W (Tc) Through Hole TO-264 (IXTK), PolarP™
View
RD3H080SPTL1
Rohm Semiconductor, P-Channel 45V 8A (Ta) 15W (Tc) Surface Mount TO-252,
View
PMV32UP,215
Nexperia USA Inc., P-Channel 20V 4A (Ta) 510mW (Ta) Surface Mount TO-236AB,
View
SSM3J355R,LF
Toshiba Semiconductor and Storage, P-Channel 20V 6A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVII
View
SIA477EDJ-T1-GE3
Vishay Siliconix, P-Channel 12V 12A (Tc) Surface Mount PowerPAK® SC-70-6 Single, TrenchFET®
View
RAL025P01TCR
Rohm Semiconductor, P-Channel 12V 2.5A (Ta) 320mW (Ta) Surface Mount TUMT6,
View
SISH129DN-T1-GE3 - Tags