SISC06DN-T1-GE3
SISC06DN-T1-GE3
Part Number SISC06DN-T1-GE3 Description MOSFET N-CH 30V Package / Case PowerPAK® 1212-8Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 30V 27.6A (Ta), 40A (Tc) 3.7W (Ta), 46.3W (Tc) Surface Mount PowerPAK® 1212-8
To learn about the specification of SISC06DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SISC06DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SISC06DN-T1-GE3.
We are offering SISC06DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SISC06DN-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SISC06DN Standard Package 3000 Manufacturer Vishay Siliconix Series TrenchFET® Gen IV Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 27.6A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2.7mOhm @ 15A, 10V Vgs(th) (Max) @ Id 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 58nC @ 10V Vgs (Max) +20V, -16V Input Capacitance (Ciss) (Max) @ Vds 2455pF @ 15V FET Feature - Power Dissipation (Max) 3.7W (Ta), 46.3W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8 Package / Case PowerPAK® 1212-8
SISC06DN-T1-GE3 - Related ProductsMore >>
STN2NF10 STMicroelectronics, N-Channel 100V 2.4A (Tc) 3.3W (Tc) Surface Mount SOT-223, STripFET™ II
View
STW69N65M5-4 STMicroelectronics, N-Channel 650V 58A (Tc) 330W (Tc) Through Hole TO-247-4L, MDmesh™ V
View
IRFBC40PBF Vishay Siliconix, N-Channel 600V 6.2A (Tc) 125W (Tc) Through Hole TO-220AB,
View
IXFN70N60Q2 IXYS, N-Channel 600V 70A (Tc) 890W (Tc) Chassis Mount SOT-227B, HiPerFET™
View
SPA17N80C3XKSA1 Infineon Technologies, N-Channel 800V 17A (Tc) 42W (Tc) Through Hole PG-TO220-3, CoolMOS™
View
FDP047AN08A0 ON Semiconductor, N-Channel 75V 15A (Tc) 310W (Tc) Through Hole TO-220-3, PowerTrench®
View
FQPF8N80CYDTU ON Semiconductor, N-Channel 800V 8A (Tc) 59W (Tc) Through Hole TO-220F-3 (Y-Forming), QFET®
View
DMN3065LW-7 Diodes Incorporated, N-Channel 30V 4A (Ta) 770mW (Ta) Surface Mount SOT-323,
View
STF12N50M2 STMicroelectronics, N-Channel 500V 10A (Tc) 85W (Tc) Through Hole TO-220FP, MDmesh™ II Plus
View
IPD30N10S3L34ATMA1 Infineon Technologies, N-Channel 100V 30A (Tc) 57W (Tc) Surface Mount PG-TO252-3, OptiMOS™
View
FQP34N20 ON Semiconductor, N-Channel 200V 31A (Tc) 180W (Tc) Through Hole TO-220-3, QFET®
View
DMN1260UFA-7B Diodes Incorporated, N-Channel 12V 500mA (Ta) 360mW (Ta) Surface Mount X2-DFN0806-3,
View
SISC06DN-T1-GE3 - Tags
English
