Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2302CDS-T1-GE3

SI2302CDS-T1-GE3

SI2302CDS-T1-GE3

Part NumberSI2302CDS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 20V 2.6A SOT23-3

DatasheetSI2302CDS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 20V 2.6A (Ta) 710mW (Ta) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2302CDS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2302CDS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2302CDS-T1-GE3.
We are offering SI2302CDS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2302CDS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2302CDS
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	57mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id	850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	5.5nC @ 4.5V
Vgs (Max)	±8V
FET Feature	-
Power Dissipation (Max)	710mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2302CDS-T1-GE3 - Related Products

	LND01K1-G	Microchip Technology, N-Channel 9V 330mA (Tj) 360mW (Ta) Surface Mount SOT-23-5,	View
	IRFR420ATRPBF	Vishay Siliconix, N-Channel 500V 3.3A (Tc) 83W (Tc) Surface Mount D-Pak,	View
	RUC002N05T116	Rohm Semiconductor, N-Channel 50V 200mA (Ta) 200mW (Ta) Surface Mount SST3,	View
	TK100A10N1,S4X	Toshiba Semiconductor and Storage, N-Channel 100V 100A (Tc) 45W (Tc) Through Hole TO-220SIS, U-MOSVIII-H	View
	PSMN020-100YS,115	Nexperia USA Inc., N-Channel 100V 43A (Tc) 106W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	DMN3730UFB4-7	Diodes Incorporated, N-Channel 30V 750mA (Ta) 470mW (Ta) Surface Mount X2-DFN1006-3,	View
	IXFK320N17T2	IXYS, N-Channel 170V 320A (Tc) 1670W (Tc) Through Hole TO-264AA (IXFK), GigaMOS™	View
	PSMN025-100D,118	Nexperia USA Inc., N-Channel 100V 47A (Tc) 150W (Tc) Surface Mount DPAK, TrenchMOS™	View
	TK56A12N1,S4X	Toshiba Semiconductor and Storage, N-Channel 120V 56A (Tc) 45W (Tc) Through Hole TO-220SIS, U-MOSVIII-H	View
	BSC0906NSATMA1	Infineon Technologies, N-Channel 30V 18A (Ta), 63A (Tc) 2.5W (Ta), 30W (Tc) Surface Mount PG-TDSON-8-6, OptiMOS™	View
	IRF7488TRPBF	Infineon Technologies, N-Channel 80V 6.3A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®	View
	SI2316BDS-T1-GE3	Vishay Siliconix, N-Channel 30V 4.5A (Tc) 1.25W (Ta), 1.66W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View

SI2302CDS-T1-GE3 - Tags

SI2302CDS-T1-GE3 SI2302CDS-T1-GE3 PDF SI2302CDS-T1-GE3 datasheet SI2302CDS-T1-GE3 specification SI2302CDS-T1-GE3 image SI2302CDS-T1-GE3 India Renesas Electronics India SI2302CDS-T1-GE3 buy SI2302CDS-T1-GE3 SI2302CDS-T1-GE3 price SI2302CDS-T1-GE3 distributor SI2302CDS-T1-GE3 supplier SI2302CDS-T1-GE3 wholesales