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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR3707ZPbF, IRFU3707ZPbF
Standard Package 1
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.25V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 14nC @ 4.5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1150pF @ 15V
FET Feature -
Power Dissipation (Max) 50W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
TSM70N1R4CP ROG
Taiwan Semiconductor Corporation, N-Channel 700V 3.3A (Tc) 38W (Tc) Surface Mount TO-252, (D-Pak),
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SSM6K202FE,LF
Toshiba Semiconductor and Storage, N-Channel 30V 2.3A (Ta) 500mW (Ta) Surface Mount ES6 (1.6x1.6),
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IXFH6N100F
IXYS-RF, N-Channel 1000V 6A (Tc) 180W (Tc) Through Hole TO-247 (IXFH), HiPerRF™
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BFL4026-1E
ON Semiconductor, N-Channel 900V 3.5A (Tc) 2W (Ta), 35W (Tc) Through Hole TO-220F-3FS,
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FDC5661N-F085
ON Semiconductor, N-Channel 60V 4.3A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6, Automotive, AEC-Q101, PowerTrench®
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SIHP30N60E-E3
Vishay Siliconix, N-Channel 600V 29A (Tc) 250W (Tc) Through Hole TO-220AB,
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SUM70040M-GE3
Vishay Siliconix, N-Channel 100V 120A (Tc) 375W (Tc) Surface Mount TO-263-7, TrenchFET®
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FDA70N20
ON Semiconductor, N-Channel 200V 70A (Tc) 417W (Tc) Through Hole TO-3PN, UniFET™
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IRFB7534PBF
Infineon Technologies, N-Channel 60V 195A (Tc) 294W (Tc) Through Hole TO-220AB, HEXFET®, StrongIRFET™
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PSMN4R3-30PL,127
Nexperia USA Inc., N-Channel 30V 100A (Tc) 103W (Tc) Through Hole TO-220AB,
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R6009JNJGTL
Rohm Semiconductor, N-Channel 600V 9A (Tc) 125W (Tc) Surface Mount LPTS (D2PAK),
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BSH105,215
Nexperia USA Inc., N-Channel 20V 1.05A (Ta) 417mW (Ta) Surface Mount TO-236AB,
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