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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR3707ZPbF, IRFU3707ZPbF
Standard Package 1
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.25V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 14nC @ 4.5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1150pF @ 15V
FET Feature -
Power Dissipation (Max) 50W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
FDB52N20TM
ON Semiconductor, N-Channel 200V 52A (Tc) 357W (Tc) Surface Mount D²PAK, UniFET™
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IRFB4615PBF
Infineon Technologies, N-Channel 150V 35A (Tc) 144W (Tc) Through Hole TO-220AB, HEXFET®
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CSD16410Q5A
Texas Instruments, N-Channel 25V 16A (Ta), 59A (Tc) 3W (Ta) Surface Mount 8-VSONP (5x6), NexFET™
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SSM3K123TU,LF
Toshiba Semiconductor and Storage, N-Channel 20V 4.2A (Ta) 500mW (Ta) Surface Mount UFM, U-MOSIII
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STD25NF10T4
STMicroelectronics, N-Channel 100V 25A (Tc) 100W (Tc) Surface Mount DPAK, STripFET™ II
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FQPF6N90C
ON Semiconductor, N-Channel 900V 6A (Tc) 56W (Tc) Through Hole TO-220F, QFET®
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SSM3K72KFS,LF
Toshiba Semiconductor and Storage, N-Channel 60V 300mA (Ta) 150mW (Ta) Surface Mount SSM, U-MOSVII-H
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2N7002P,215
Nexperia USA Inc., N-Channel 60V 360mA (Ta) 350mW (Ta) Surface Mount TO-236AB,
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STL130N6F7
STMicroelectronics, N-Channel 60V 130A (Tc) 4.8W (Ta), 125W (Tc) Surface Mount PowerFlat™ (5x6), STripFET™ F7
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FDS86540
ON Semiconductor, N-Channel 60V 18A (Ta) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC, PowerTrench®
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CEDM7004 TR
Central Semiconductor Corp, N-Channel 30V 1.78A (Ta) 100mW (Ta) Surface Mount SOT-883,
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PMV28UNEAR
Nexperia USA Inc., N-Channel 20V 4.7A (Ta) 510mW (Ta), 3.9W (Tc) Surface Mount TO-236AB, Automotive, AEC-Q101
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