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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR3707ZPbF, IRFU3707ZPbF
Standard Package 1
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.25V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 14nC @ 4.5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1150pF @ 15V
FET Feature -
Power Dissipation (Max) 50W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
IRFZ44VZPBF
Infineon Technologies, N-Channel 60V 57A (Tc) 92W (Tc) Through Hole TO-220AB, HEXFET®
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STD17NF03LT4
STMicroelectronics, N-Channel 30V 17A (Tc) 30W (Tc) Surface Mount DPAK, STripFET™ II
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SIHG065N60E-GE3
Vishay Siliconix, N-Channel 600V 40A (Tc) 250W (Tc) Through Hole TO-247AC,
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STF10N65K3
STMicroelectronics, N-Channel 650V 10A (Tc) 35W (Tc) Through Hole TO-220FP, SuperMESH3™
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FDMS7682
ON Semiconductor, N-Channel 30V 16A (Ta), 22A (Tc) 2.5W (Ta), 33W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®
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SQJ422EP-T1_GE3
Vishay Siliconix, N-Channel 40V 74A (Tc) 83W (Tc) Surface Mount, Automotive, AEC-Q101, TrenchFET®
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RJU002N06T106
Rohm Semiconductor, N-Channel 60V 200mA (Ta) 200mW (Ta) Surface Mount UMT3,
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CSD16556Q5B
Texas Instruments, N-Channel 25V 100A (Tc) 3.2W (Ta), 191W (Tc) Surface Mount 8-VSONP (5x6), NexFET™
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DMT6009LSS-13
Diodes Incorporated, N-Channel 60V 10.8A (Ta) 1.25W (Ta) Surface Mount 8-SO,
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SI4634DY-T1-GE3
Vishay Siliconix, N-Channel 30V 24.5A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SO, TrenchFET®
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CSD18501Q5A
Texas Instruments, N-Channel 40V 22A (Ta), 100A (Tc) 3.1W (Ta), 150W (Tc) Surface Mount 8-VSONP (5x6), NexFET™
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IPN50R1K4CEATMA1
Infineon Technologies, N-Channel 500V 4.8A (Tc) 5W (Tc) Surface Mount PG-SOT223, CoolMOS™ CE
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