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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR3707ZPbF, IRFU3707ZPbF
Standard Package 1
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.25V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 14nC @ 4.5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1150pF @ 15V
FET Feature -
Power Dissipation (Max) 50W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
DMG3418L-7
Diodes Incorporated, N-Channel 30V 4A (Ta) 1.4W (Ta) Surface Mount SOT-23,
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SQD23N06-31L_GE3
Vishay Siliconix, N-Channel 60V 23A (Tc) 37W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®
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BUK7M27-80EX
Nexperia USA Inc., N-Channel 80V 30A (Tc) 62W (Tc) Surface Mount LFPAK33, Automotive, AEC-Q101, TrenchMOS™
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IRFS3107TRL7PP
Infineon Technologies, N-Channel 75V 240A (Tc) 370W (Tc) Surface Mount D2PAK (7-Lead), HEXFET®
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TK31N60W5,S1VF
Toshiba Semiconductor and Storage, N-Channel 600V 30.8A (Ta) 230W (Tc) Through Hole TO-247, DTMOSIV
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DMN6068LK3-13
Diodes Incorporated, N-Channel 60V 6A (Ta) 2.12W (Ta) Surface Mount TO-252-3,
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SI8802DB-T2-E1
Vishay Siliconix, N-Channel 8V 500mW (Ta) Surface Mount 4-Microfoot, TrenchFET®
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IXTK180N15P
IXYS, N-Channel 150V 180A (Tc) 800W (Tc) Through Hole TO-264 (IXTK), PolarHT™
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BS170
ON Semiconductor, N-Channel 60V 500mA (Ta) 830mW (Ta) Through Hole TO-92-3,
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PSMN1R9-40PLQ
Nexperia USA Inc., N-Channel 40V 150A (Tc) 349W (Tc) Through Hole TO-220AB,
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STI270N4F3
STMicroelectronics, N-Channel 40V 160A (Tc) 330W (Tc) Through Hole I2PAK, Automotive, AEC-Q101, STripFET™ III
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RFD16N05LSM9A
ON Semiconductor, N-Channel 50V 16A (Tc) 60W (Tc) Surface Mount TO-252AA,
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