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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR3707ZPbF, IRFU3707ZPbF
Standard Package 1
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.25V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 14nC @ 4.5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1150pF @ 15V
FET Feature -
Power Dissipation (Max) 50W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
STB10LN80K5
STMicroelectronics, N-Channel 800V 8A (Tc) 110W (Tc) Surface Mount D2PAK, MDmesh™ K5
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NTD5C434NT4G
ON Semiconductor, N-Channel 40V 33A (Ta), 160A (Tc) 4.7W (Ta), 120W (Tc) Surface Mount DPAK (SINGLE GAUGE),
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SI4850EY-T1-GE3
Vishay Siliconix, N-Channel 60V 6A (Ta) 1.7W (Ta) Surface Mount 8-SO, TrenchFET®
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STF13N60DM2
STMicroelectronics, N-Channel 600V 11A (Tc) 25W (Tc) Through Hole TO-220FP, MDmesh™ DM2
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IXFH22N50P
IXYS, N-Channel 500V 22A (Tc) 350W (Tc) Through Hole TO-247AD (IXFH), HiPerFET™, PolarHT™
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FQP46N15
ON Semiconductor, N-Channel 150V 45.6A (Tc) 210W (Tc) Through Hole TO-220-3, QFET®
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BSC109N10NS3GATMA1
Infineon Technologies, N-Channel 100V 63A (Tc) 78W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™
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IRFIZ34GPBF
Vishay Siliconix, N-Channel 60V 20A (Tc) 42W (Tc) Through Hole TO-220-3,
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STB130N6F7
STMicroelectronics, N-Channel 60V 80A (Tc) 160W (Tc) Surface Mount D2PAK, STripFET™ F7
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STI57N65M5
STMicroelectronics, N-Channel 650V 42A (Tc) 250W (Tc) Through Hole I2PAK (TO-262), MDmesh™ V
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IRF3805STRLPBF
Infineon Technologies, N-Channel 55V 75A (Tc) 300W (Tc) Surface Mount D2PAK, HEXFET®
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HAT2165H-EL-E
Renesas Electronics America, N-Channel 30V 55A (Ta) 30W (Tc) Surface Mount LFPAK,
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