SISA12ADN-T1-GE3
SISA12ADN-T1-GE3
Part Number SISA12ADN-T1-GE3 Description MOSFET N-CH 30V 25A 1212-8 Package / Case PowerPAK® 1212-8Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 30V 25A (Tc) 3.5W (Ta), 28W (Tc) Surface Mount PowerPAK® 1212-8
To learn about the specification of SISA12ADN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SISA12ADN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SISA12ADN-T1-GE3.
We are offering SISA12ADN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SISA12ADN-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SISA12ADN-T1-GE3 Standard Package 3000 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 25A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4.3mOhm @ 10A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V Vgs (Max) +20V, -16V Input Capacitance (Ciss) (Max) @ Vds 2070pF @ 15V FET Feature - Power Dissipation (Max) 3.5W (Ta), 28W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8 Package / Case PowerPAK® 1212-8
SISA12ADN-T1-GE3 - Related ProductsMore >>
STD3NK100Z STMicroelectronics, N-Channel 1000V 2.5A (Tc) 90W (Tc) Surface Mount DPAK, SuperMESH™
View
STF13N60M2 STMicroelectronics, N-Channel 600V 11A (Tc) 25W (Tc) Through Hole TO-220FP, MDmesh™ II Plus
View
IXFT32N100XHV IXYS, N-Channel 1000V 32A (Tc) 890W (Tc) Surface Mount TO-268HV (IXFT), HiPerFET™
View
STF8NM50N STMicroelectronics, N-Channel 500V 5A (Tc) 20W (Tc) Through Hole TO-220FP, MDmesh™ II
View
IPA60R280P7XKSA1 Infineon Technologies, N-Channel 600V 12A (Tc) 24W (Tc) Through Hole PG-TO220 Full Pack, CoolMOS™ P7
View
TSM35N10CP ROG Taiwan Semiconductor Corporation, N-Channel 100V 32A (Tc) 83.3W (Tc) Surface Mount TO-252, (D-Pak),
View
CEDM7001 TR Central Semiconductor Corp, N-Channel 20V 100mA (Ta) 100mW (Ta) Surface Mount SOT-883,
View
PHB45NQ15T,118 Nexperia USA Inc., N-Channel 150V 45.1A (Tc) 230W (Tc) Surface Mount D2PAK, TrenchMOS™
View
TK32E12N1,S1X Toshiba Semiconductor and Storage, N-Channel 120V 60A (Tc) 98W (Tc) Through Hole TO-220, U-MOSVIII-H
View
RYM002N05T2CL Rohm Semiconductor, N-Channel 50V 200mA (Ta) 150mW (Ta) Surface Mount VMT3,
View
BSP300H6327XUSA1 Infineon Technologies, N-Channel 800V 190mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4, SIPMOS®
View
IPP075N15N3GXKSA1 Infineon Technologies, N-Channel 150V 100A (Tc) 300W (Tc) Through Hole PG-TO220-3, OptiMOS™
View
SISA12ADN-T1-GE3 - Tags
English
