Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SISA10DN-T1-GE3

SISA10DN-T1-GE3

SISA10DN-T1-GE3

Part NumberSISA10DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 30A 1212-8

DatasheetSISA10DN

Package / CasePowerPAK® 1212-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 30A (Tc) 3.6W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8

To learn about the specification of SISA10DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SISA10DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SISA10DN-T1-GE3.
We are offering SISA10DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SISA10DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SISA10DN
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	3.7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	51nC @ 10V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	2425pF @ 15V
FET Feature	-
Power Dissipation (Max)	3.6W (Ta), 39W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8

SISA10DN-T1-GE3 - Related Products

	PMCM4401VNEAZ	Nexperia USA Inc., N-Channel 12V 4.7A (Ta) 400mW (Ta), 12.5W (Tc) Surface Mount 4-WLCSP (2x2),	View
	SIR472ADP-T1-GE3	Vishay Siliconix, N-Channel 30V 18A (Tc) 3.3W (Ta), 14.7W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	SIE812DF-T1-GE3	Vishay Siliconix, N-Channel 40V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L), TrenchFET®	View
	SIHP20N50E-GE3	Vishay Siliconix, N-Channel 500V 19A (Tc) 179W (Tc) Through Hole TO-220AB,	View
	AUIRF7675M2TR	Infineon Technologies, N-Channel 150V 4.4A (Ta), 18A (Tc) 2.7W (Ta), 45W (Tc) Surface Mount DIRECTFET™ M2, HEXFET®	View
	STP3NK90Z	STMicroelectronics, N-Channel 900V 3A (Tc) 90W (Tc) Through Hole TO-220AB, SuperMESH™	View
	IRFI644GPBF	Vishay Siliconix, N-Channel 250V 7.9A (Tc) 40W (Tc) Through Hole TO-220-3,	View
	STB14NK60ZT4	STMicroelectronics, N-Channel 600V 13.5A (Tc) 160W (Tc) Surface Mount D2PAK, SuperMESH™	View
	BS107PSTZ	Diodes Incorporated, N-Channel 200V 120mA (Ta) 500mW (Ta) Through Hole E-Line (TO-92 compatible), Automotive, AEC-Q101	View
	MMBF170LT1G	ON Semiconductor, N-Channel 60V 500mA (Ta) 225mW (Ta) Surface Mount SOT-23-3 (TO-236),	View
	SIRA16DP-T1-GE3	Vishay Siliconix, N-Channel 30V 16A (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	BSZ018NE2LSATMA1	Infineon Technologies, N-Channel 25V 23A (Ta), 40A (Tc) 2.1W (Ta), 69W (Tc) Surface Mount PG-TSDSON-8-FL, OptiMOS™	View

SISA10DN-T1-GE3 - Tags

SISA10DN-T1-GE3 SISA10DN-T1-GE3 PDF SISA10DN-T1-GE3 datasheet SISA10DN-T1-GE3 specification SISA10DN-T1-GE3 image SISA10DN-T1-GE3 India Renesas Electronics India SISA10DN-T1-GE3 buy SISA10DN-T1-GE3 SISA10DN-T1-GE3 price SISA10DN-T1-GE3 distributor SISA10DN-T1-GE3 supplier SISA10DN-T1-GE3 wholesales