Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIE822DF-T1-GE3

SIE822DF-T1-GE3

SIE822DF-T1-GE3

Part NumberSIE822DF-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 20V 50A POLARPAK

DatasheetSIE822DF

Package / Case10-PolarPAK® (S)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 20V 50A (Tc) 5.2W (Ta), 104W (Tc) Surface Mount 10-PolarPAK® (S)

To learn about the specification of SIE822DF-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIE822DF-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIE822DF-T1-GE3.
We are offering SIE822DF-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIE822DF-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIE822DF
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	3.4mOhm @ 18.3A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	78nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4200pF @ 10V
FET Feature	-
Power Dissipation (Max)	5.2W (Ta), 104W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	10-PolarPAK® (S)
Package / Case	10-PolarPAK® (S)

SIE822DF-T1-GE3 - Related Products

	BSZ050N03LSGATMA1	Infineon Technologies, N-Channel 30V 16A (Ta), 40A (Tc) 2.1W (Ta), 50W (Tc) Surface Mount PG-TSDSON-8, OptiMOS™	View
	IRL530NSTRLPBF	Infineon Technologies, N-Channel 100V 17A (Tc) 3.8W (Ta), 79W (Tc) Surface Mount D2PAK, HEXFET®	View
	PSMN1R1-30PL,127	Nexperia USA Inc., N-Channel 30V 120A (Tc) 338W (Tc) Through Hole TO-220AB,	View
	IPB160N04S4H1ATMA1	Infineon Technologies, N-Channel 40V 160A (Tc) 167W (Tc) Surface Mount PG-TO263-7-3, OptiMOS™	View
	NTHS5404T1G	ON Semiconductor, N-Channel 20V 5.2A (Ta) 1.3W (Ta) Surface Mount ChipFET™,	View
	TN2130K1-G	Microchip Technology, N-Channel 300V 85mA (Tj) 360mW (Tc) Surface Mount TO-236AB (SOT23),	View
	RFP12N10L	ON Semiconductor, N-Channel 100V 12A (Tc) 60W (Tc) Through Hole TO-220-3,	View
	FQP3N60C	ON Semiconductor, N-Channel 600V 3A (Tc) 75W (Tc) Through Hole TO-220-3, QFET®	View
	FQB11N40CTM	ON Semiconductor, N-Channel 400V 10.5A (Tc) 135W (Tc) Surface Mount D²PAK (TO-263AB), QFET®	View
	RFD16N05LSM9A	ON Semiconductor, N-Channel 50V 16A (Tc) 60W (Tc) Surface Mount TO-252AA,	View
	NVTFS6H854NTAG	ON Semiconductor, N-Channel 80V 9.5A (Ta), 44A (Tc) 3.2W (Ta), 68W (Tc) Surface Mount 8-WDFN (3.3x3.3), Automotive, AEC-Q101	View
	SI2324A-TP	Micro Commercial Co, N-Channel 100V 2A 1.2W Surface Mount SOT-23,	View

SIE822DF-T1-GE3 - Tags

SIE822DF-T1-GE3 SIE822DF-T1-GE3 PDF SIE822DF-T1-GE3 datasheet SIE822DF-T1-GE3 specification SIE822DF-T1-GE3 image SIE822DF-T1-GE3 India Renesas Electronics India SIE822DF-T1-GE3 buy SIE822DF-T1-GE3 SIE822DF-T1-GE3 price SIE822DF-T1-GE3 distributor SIE822DF-T1-GE3 supplier SIE822DF-T1-GE3 wholesales