SIS888DN-T1-GE3
SIS888DN-T1-GE3
Part Number SIS888DN-T1-GE3
Description MOSFET N-CH 150V 20.2A 1212-8S
Package / Case PowerPAK® 1212-8S
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 150V 20.2A (Tc) 52W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3)
To learn about the specification of SIS888DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIS888DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIS888DN-T1-GE3.
We are offering SIS888DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SIS888DN-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIS888DN
Standard Package 3000
Manufacturer Vishay Siliconix
Series ThunderFET®
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150V
Current - Continuous Drain (Id) @ 25°C 20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 58mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14.5nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 420pF @ 75V
FET Feature -
Power Dissipation (Max) 52W (Tc)
Operating Temperature -55°C ~ 150°C (TA)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8S (3.3x3.3)
Package / Case PowerPAK® 1212-8S
SIS888DN-T1-GE3 - Related ProductsMore >>
FDT86244
ON Semiconductor, N-Channel 150V 2.8A (Tc) 2.2W (Ta) Surface Mount SOT-223-4, PowerTrench®
View
IRFR320TRLPBF
Vishay Siliconix, N-Channel 400V 3.1A (Tc) 42W (Tc) Surface Mount D-Pak,
View
AO4402
Alpha & Omega Semiconductor Inc., N-Channel 20V 20A (Ta) 3.1W (Ta) Surface Mount 8-SOIC,
View
PMZB600UNELYL
Nexperia USA Inc., N-Channel 20V 600mA (Ta) 360mW (Ta) Surface Mount DFN1006B-3, TrenchMOS™
View
FDD8451
ON Semiconductor, N-Channel 40V 9A (Ta), 28A (Tc) 30W (Tc) Surface Mount D-PAK (TO-252), PowerTrench®
View
IRF820STRLPBF
Vishay Siliconix, N-Channel 500V 2.5A (Tc) 3.1W (Ta), 50W (Tc) Surface Mount D2PAK,
View
DMN1054UCB4-7
Diodes Incorporated, N-Channel 8V 2.7A (Ta) 740mW (Ta) Surface Mount X1-WLB0808-4,
View
BTS282ZE3180AATMA2
Infineon Technologies, N-Channel 49V 80A (Tc) 300W (Tc) Surface Mount PG-TO263-7-1, TEMPFET®
View
STY112N65M5
STMicroelectronics, N-Channel 650V 96A (Tc) 625W (Tc) Through Hole MAX247™, MDmesh™ V
View
IRFB3307PBF
Infineon Technologies, N-Channel 75V 130A (Tc) 200W (Tc) Through Hole TO-220AB, HEXFET®
View
BSC196N10NSGATMA1
Infineon Technologies, N-Channel 100V 8.5A (Ta), 45A (Tc) 78W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™
View
STF28N60M2
STMicroelectronics, N-Channel 600V 24A (Tc) 30W (Tc) Through Hole TO-220FP, MDmesh™ II Plus
View
SIS888DN-T1-GE3 - Tags