Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIS888DN-T1-GE3

SIS888DN-T1-GE3

SIS888DN-T1-GE3

Part NumberSIS888DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 150V 20.2A 1212-8S

DatasheetSIS888DN

Package / CasePowerPAK® 1212-8S

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 150V 20.2A (Tc) 52W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3)

To learn about the specification of SIS888DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIS888DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIS888DN-T1-GE3.
We are offering SIS888DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIS888DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIS888DN
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	ThunderFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25°C	20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	58mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	4.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	14.5nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	420pF @ 75V
FET Feature	-
Power Dissipation (Max)	52W (Tc)
Operating Temperature	-55°C ~ 150°C (TA)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8S (3.3x3.3)
Package / Case	PowerPAK® 1212-8S

SIS888DN-T1-GE3 - Related Products

	CSD17527Q5A	Texas Instruments, N-Channel 30V 65A (Tc) 3W (Ta) Surface Mount 8-VSONP (5x6), NexFET™	View
	AOD11S60	Alpha & Omega Semiconductor Inc., N-Channel 600V 11A (Tc) 208W (Tc) Surface Mount TO-252, (D-Pak), aMOS™	View
	TK50P04M1(T6RSS-Q)	Toshiba Semiconductor and Storage, N-Channel 40V 50A (Ta) 60W (Tc) Surface Mount DP, U-MOSVI-H	View
	IRL630STRLPBF	Vishay Siliconix, N-Channel 200V 9A (Tc) 3.1W (Ta), 74W (Tc) Surface Mount D2PAK,	View
	STB19NF20	STMicroelectronics, N-Channel 200V 15A (Tc) 90W (Tc) Surface Mount D2PAK, MESH OVERLAY™	View
	FQA44N30	ON Semiconductor, N-Channel 300V 43.5A (Tc) 310W (Tc) Through Hole TO-3PN, QFET®	View
	BUK6D23-40EX	Nexperia USA Inc., N-Channel 40V 8A (Ta), 19A (Tc) 2.3W (Ta), 15W (Tc) Surface Mount DFN2020MD-6, Automotive, AEC-Q101, TrenchMOS™	View
	IPP90R340C3XKSA1	Infineon Technologies, N-Channel 900V 15A (Tc) 208W (Tc) Through Hole PG-TO220-3, CoolMOS™	View
	IRF1405STRLPBF	Infineon Technologies, N-Channel 55V 131A (Tc) 200W (Tc) Surface Mount D2PAK, HEXFET®	View
	STL8N65M2	STMicroelectronics, N-Channel 650V Surface Mount,	View
	STP40NF10L	STMicroelectronics, N-Channel 100V 40A (Tc) 150W (Tc) Through Hole TO-220AB, STripFET™	View
	IPD350N06LGBTMA1	Infineon Technologies, N-Channel 60V 29A (Tc) 68W (Tc) Surface Mount PG-TO252-3, OptiMOS™	View

SIS888DN-T1-GE3 - Tags

SIS888DN-T1-GE3 SIS888DN-T1-GE3 PDF SIS888DN-T1-GE3 datasheet SIS888DN-T1-GE3 specification SIS888DN-T1-GE3 image SIS888DN-T1-GE3 India Renesas Electronics India SIS888DN-T1-GE3 buy SIS888DN-T1-GE3 SIS888DN-T1-GE3 price SIS888DN-T1-GE3 distributor SIS888DN-T1-GE3 supplier SIS888DN-T1-GE3 wholesales