Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIS862DN-T1-GE3

SIS862DN-T1-GE3

SIS862DN-T1-GE3

Part NumberSIS862DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 60V 40A 1212

DatasheetSIS862DN

Package / CasePowerPAK® 1212-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 40A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

To learn about the specification of SIS862DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIS862DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIS862DN-T1-GE3.
We are offering SIS862DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIS862DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIS862DN
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	8.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	32nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1320pF @ 30V
FET Feature	-
Power Dissipation (Max)	3.7W (Ta), 52W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8

SIS862DN-T1-GE3 - Related Products

	IXFB132N50P3	IXYS, N-Channel 500V 132A (Tc) 1890W (Tc) Through Hole PLUS264™, HiPerFET™, Polar3™	View
	IRF7811AVTRPBF	Infineon Technologies, N-Channel 30V 10.8A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®	View
	IXTH450P2	IXYS, N-Channel 500V 16A (Tc) 300W (Tc) Through Hole TO-247 (IXTH), PolarP2™	View
	TN0620N3-G	Microchip Technology, N-Channel 200V 250mA (Tj) 1W (Tc) Through Hole TO-92-3,	View
	BSS159NH6327XTSA2	Infineon Technologies, N-Channel 60V 230mA (Ta) 360mW (Ta) Surface Mount SOT-23-3, SIPMOS®	View
	FCMT299N60	ON Semiconductor, N-Channel 600V 12A (Ta) 125W (Tc) Surface Mount Power88, SuperFET® II	View
	IRFI4510GPBF	Infineon Technologies, N-Channel 100V 35A (Tc) 42W (Tc) Through Hole TO-220AB Full-Pak, HEXFET®	View
	FDMC86324	ON Semiconductor, N-Channel 80V 7A (Ta), 20A (Tc) 2.3W (Ta), 41W (Tc) Surface Mount Power33, PowerTrench®	View
	IPD90N04S402ATMA1	Infineon Technologies, N-Channel 40V 90A (Tc) 150W (Tc) Surface Mount PG-TO252-3-313, Automotive, AEC-Q101, OptiMOS™	View
	BUK9Y12-100E,115	Nexperia USA Inc., N-Channel 100V 85A (Tc) 238W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101	View
	STP3NK80Z	STMicroelectronics, N-Channel 800V 2.5A (Tc) 70W (Tc) Through Hole TO-220AB, SuperMESH™	View
	FDMC86102LZ	ON Semiconductor, N-Channel 100V 7A (Ta), 18A (Tc) 2.3W (Ta), 41W (Tc) Surface Mount 8-MLP (3.3x3.3), PowerTrench®	View

SIS862DN-T1-GE3 - Tags

SIS862DN-T1-GE3 SIS862DN-T1-GE3 PDF SIS862DN-T1-GE3 datasheet SIS862DN-T1-GE3 specification SIS862DN-T1-GE3 image SIS862DN-T1-GE3 India Renesas Electronics India SIS862DN-T1-GE3 buy SIS862DN-T1-GE3 SIS862DN-T1-GE3 price SIS862DN-T1-GE3 distributor SIS862DN-T1-GE3 supplier SIS862DN-T1-GE3 wholesales