SIS434DN-T1-GE3
SIS434DN-T1-GE3
Part Number SIS434DN-T1-GE3 Description MOSFET N-CH 40V 35A PPAK 1212-8 Package / Case PowerPAK® 1212-8Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 40V 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
To learn about the specification of SIS434DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIS434DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIS434DN-T1-GE3.
We are offering SIS434DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SIS434DN-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIS434DN Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 35A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 7.6mOhm @ 16.2A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1530pF @ 20V FET Feature - Power Dissipation (Max) 3.8W (Ta), 52W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8 Package / Case PowerPAK® 1212-8
SIS434DN-T1-GE3 - Related ProductsMore >>
RUC002N05T116 Rohm Semiconductor, N-Channel 50V 200mA (Ta) 200mW (Ta) Surface Mount SST3,
View
RD3U080CNTL1 Rohm Semiconductor, N-Channel 250V 8A (Tc) 85W (Tc) Surface Mount TO-252,
View
CSD17581Q3A Texas Instruments, N-Channel 30V 21A (Ta) 2.8W (Ta), 63W (Tc) Surface Mount 8-VSONP (3x3.15), NexFET™
View
IPLU300N04S4R8XTMA1 Infineon Technologies, N-Channel 40V 300A (Tc) 429W (Tc) Surface Mount PG-HSOF-8-1, OptiMOS™
View
DMN10H100SK3-13 Diodes Incorporated, N-Channel 100V 18A (Tc) 37W (Tc) Surface Mount TO-252,
View
BSC100N03MSGATMA1 Infineon Technologies, N-Channel 30V 12A (Ta), 44A (Tc) 2.5W (Ta), 30W (Tc) Surface Mount PG-TDSON-8-5, OptiMOS™
View
IRLR120TRPBF Vishay Siliconix, N-Channel 100V 7.7A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak,
View
SIHB15N60E-GE3 Vishay Siliconix, N-Channel 600V 15A (Tc) 180W (Tc) Surface Mount D2PAK,
View
SSM3K116TU,LF Toshiba Semiconductor and Storage, N-Channel 30V 2.2A (Ta) 500mW (Ta) Surface Mount UFM, U-MOSIII
View
IRFZ44ZPBF Infineon Technologies, N-Channel 55V 51A (Tc) 80W (Tc) Through Hole TO-220AB, HEXFET®
View
IRFIB7N50APBF Vishay Siliconix, N-Channel 500V 6.6A (Tc) 60W (Tc) Through Hole TO-220-3,
View
IRFS4127TRLPBF Infineon Technologies, N-Channel 200V 72A (Tc) 375W (Tc) Surface Mount D2PAK, HEXFET®
View
SIS434DN-T1-GE3 - Tags
English
