Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIS106DN-T1-GE3

SIS106DN-T1-GE3

SIS106DN-T1-GE3

Part NumberSIS106DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN 60V POWERPAK 1212-

DatasheetSIS106DN

Package / CasePowerPAK® 1212-8S

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 9.8A (Ta), 16A (Tc) 3.2W (Ta), 24W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3)

To learn about the specification of SIS106DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIS106DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIS106DN-T1-GE3.
We are offering SIS106DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIS106DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIS106DN
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	9.8A (Ta), 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	18.5mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	13.5nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	540pF @ 30V
FET Feature	-
Power Dissipation (Max)	3.2W (Ta), 24W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8S (3.3x3.3)
Package / Case	PowerPAK® 1212-8S

SIS106DN-T1-GE3 - Related Products

	IRF2804STRL7PP	Infineon Technologies, N-Channel 40V 160A (Tc) 330W (Tc) Surface Mount D2PAK (7-Lead), HEXFET®	View
	ZVN4210GTA	Diodes Incorporated, N-Channel 100V 800mA (Ta) 2W (Ta) Surface Mount SOT-223,	View
	FCPF150N65F	ON Semiconductor, N-Channel 650V 14.9A (Tc) 39W (Tc) Through Hole TO-220F,	View
	SIS488DN-T1-GE3	Vishay Siliconix, N-Channel 40V 40A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	XR46000ESETR	MaxLinear, Inc., N-Channel 600V 1.5A (Tc) 20W (Tc) Surface Mount SOT-223,	View
	IRF830STRLPBF	Vishay Siliconix, N-Channel 500V 4.5A (Tc) 74W (Tc) Surface Mount,	View
	STL18N65M5	STMicroelectronics, N-Channel 650V 15A (Tc) 57W (Tc) Surface Mount PowerFlat™ (5x6), MDmesh™ V	View
	IRFR120TRPBF	Vishay Siliconix, N-Channel 100V 7.7A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak,	View
	IRF730APBF	Vishay Siliconix, N-Channel 400V 5.5A (Tc) 74W (Tc) Through Hole TO-220AB,	View
	FDMC2610	ON Semiconductor, N-Channel 200V 2.2A (Ta), 9.5A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount 8-MLP (3.3x3.3), UniFET™	View
	SUD50N04-8M8P-4GE3	Vishay Siliconix, N-Channel 40V 14A (Ta), 50A (Tc) 3.1W (Ta), 48.1W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®	View
	IPB015N04NGATMA1	Infineon Technologies, N-Channel 40V 120A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™	View

SIS106DN-T1-GE3 - Tags

SIS106DN-T1-GE3 SIS106DN-T1-GE3 PDF SIS106DN-T1-GE3 datasheet SIS106DN-T1-GE3 specification SIS106DN-T1-GE3 image SIS106DN-T1-GE3 India Renesas Electronics India SIS106DN-T1-GE3 buy SIS106DN-T1-GE3 SIS106DN-T1-GE3 price SIS106DN-T1-GE3 distributor SIS106DN-T1-GE3 supplier SIS106DN-T1-GE3 wholesales