Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIS106DN-T1-GE3

SIS106DN-T1-GE3

SIS106DN-T1-GE3

Part NumberSIS106DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN 60V POWERPAK 1212-

DatasheetSIS106DN

Package / CasePowerPAK® 1212-8S

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 9.8A (Ta), 16A (Tc) 3.2W (Ta), 24W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3)

To learn about the specification of SIS106DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIS106DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIS106DN-T1-GE3.
We are offering SIS106DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIS106DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIS106DN
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	9.8A (Ta), 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	18.5mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	13.5nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	540pF @ 30V
FET Feature	-
Power Dissipation (Max)	3.2W (Ta), 24W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8S (3.3x3.3)
Package / Case	PowerPAK® 1212-8S

SIS106DN-T1-GE3 - Related Products

	IXFK170N20T	IXYS, N-Channel 200V 170A (Tc) 1150W (Tc) Through Hole TO-264AA (IXFK), GigaMOS™	View
	STW43N60DM2	STMicroelectronics, N-Channel 600V 34A (Tc) 250W (Tc) Through Hole TO-247, MDmesh™ DM2	View
	DMG3404L-7	Diodes Incorporated, N-Channel 30V 4.2A (Ta) 780mW (Ta) Surface Mount SOT-23,	View
	STF11N60DM2	STMicroelectronics, N-Channel 600V 10A (Tc) 25W (Tc) Through Hole TO-220FP, MDmesh™ DM2	View
	FDD8780	ON Semiconductor, N-Channel 25V 35A (Tc) 50W (Tc) Surface Mount TO-252AA, PowerTrench®	View
	FDBL86066-F085	ON Semiconductor, N-Channel 100V 185A (Tc) 300W (Ta) Surface Mount 8-HPSOF, PowerTrench®	View
	DMTH6016LPSQ-13	Diodes Incorporated, N-Channel 60V 9.8A (Ta), 37A (Tc) 2.6W (Ta), 37.5W (Tc) Surface Mount PowerDI5060-8, Automotive, AEC-Q101	View
	R6020JNXC7G	Rohm Semiconductor, N-Channel 600V 20A (Tc) 76W (Tc) Through Hole TO-220FM,	View
	TSM4436CS RLG	Taiwan Semiconductor Corporation, N-Channel 60V 8A (Ta) 2.5W (Ta) Surface Mount 8-SOP,	View
	DN2450N8-G	Microchip Technology, N-Channel 500V 230mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89),	View
	FDMS5672	ON Semiconductor, N-Channel 60V 10.6A (Ta), 22A (Tc) 2.5W (Ta), 78W (Tc) Surface Mount 8-MLP (5x6), Power56, UltraFET™	View
	IXTA06N120P	IXYS, N-Channel 1200V 600mA (Tc) 42W (Tc) Surface Mount TO-263 (IXTA), PolarVHV™	View

SIS106DN-T1-GE3 - Tags

SIS106DN-T1-GE3 SIS106DN-T1-GE3 PDF SIS106DN-T1-GE3 datasheet SIS106DN-T1-GE3 specification SIS106DN-T1-GE3 image SIS106DN-T1-GE3 India Renesas Electronics India SIS106DN-T1-GE3 buy SIS106DN-T1-GE3 SIS106DN-T1-GE3 price SIS106DN-T1-GE3 distributor SIS106DN-T1-GE3 supplier SIS106DN-T1-GE3 wholesales