Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIRA12DP-T1-GE3

SIRA12DP-T1-GE3

SIRA12DP-T1-GE3

Part NumberSIRA12DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 25A PPAK SO-8

DatasheetSIRA12DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 25A (Tc) 4.5W (Ta), 31W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIRA12DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIRA12DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIRA12DP-T1-GE3.
We are offering SIRA12DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIRA12DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIRA12DP
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.3mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	45nC @ 10V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	2070pF @ 15V
FET Feature	-
Power Dissipation (Max)	4.5W (Ta), 31W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIRA12DP-T1-GE3 - Related Products

	NTA4153NT1G	ON Semiconductor, N-Channel 20V 915mA (Ta) 300mW (Tj) Surface Mount SC-75, SOT-416,	View
	FCD360N65S3R0	ON Semiconductor, N-Channel 650V 10A (Tc) 83W (Tc) Surface Mount D-PAK (TO-252), SuperFET® III	View
	TK100A10N1,S4X	Toshiba Semiconductor and Storage, N-Channel 100V 100A (Tc) 45W (Tc) Through Hole TO-220SIS, U-MOSVIII-H	View
	TK560P65Y,RQ	Toshiba Semiconductor and Storage, N-Channel 650V 7A (Tc) 60W (Tc) Surface Mount DPAK, DTMOSV	View
	DMN6040SFDE-7	Diodes Incorporated, N-Channel 60V 5.3A (Ta) 660mW (Ta) Surface Mount U-DFN2020-6 (Type E),	View
	2N7002-G	Microchip Technology, N-Channel 60V 115mA (Tj) 360mW (Ta) Surface Mount SOT-23 (TO-236AB),	View
	CSD16570Q5BT	Texas Instruments, N-Channel 25V 100A (Ta) 3.2W (Ta), 195W (Tc) Surface Mount 8-VSONP (5x6), NexFET™	View
	DMT6008LFG-7	Diodes Incorporated, N-Channel 60V 13A (Ta), 60A (Tc) 2.2W (Ta), 41W (Tc) Surface Mount PowerDI3333-8,	View
	FDMS5352	ON Semiconductor, N-Channel 60V 13.6A (Ta), 49A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®	View
	SQJA84EP-T1_GE3	Vishay Siliconix, N-Channel 80V 46A (Tc) 55W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
	AO3160E	Alpha & Omega Semiconductor Inc., N-Channel 600V 40mA (Ta) 1.39W (Ta) Surface Mount SOT-23A-3,	View
	STW56N65M2	STMicroelectronics, N-Channel 650V 49A (Tc) 358W (Tc) Through Hole TO-247, MDmesh™ M2	View

SIRA12DP-T1-GE3 - Tags

SIRA12DP-T1-GE3 SIRA12DP-T1-GE3 PDF SIRA12DP-T1-GE3 datasheet SIRA12DP-T1-GE3 specification SIRA12DP-T1-GE3 image SIRA12DP-T1-GE3 India Renesas Electronics India SIRA12DP-T1-GE3 buy SIRA12DP-T1-GE3 SIRA12DP-T1-GE3 price SIRA12DP-T1-GE3 distributor SIRA12DP-T1-GE3 supplier SIRA12DP-T1-GE3 wholesales