SIR882ADP-T1-GE3
SIR882ADP-T1-GE3
Part Number SIR882ADP-T1-GE3 Description MOSFET N-CH 100V 60A PPAK SO-8 Package / Case PowerPAK® SO-8Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 60A (Tc) 5.4W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8
To learn about the specification of SIR882ADP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR882ADP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR882ADP-T1-GE3.
We are offering SIR882ADP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SIR882ADP-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SiR882ADP Standard Package 3000 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 8.7mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1975pF @ 50V FET Feature - Power Dissipation (Max) 5.4W (Ta), 83W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8
SIR882ADP-T1-GE3 - Related ProductsMore >>
IRLS3034TRL7PP Infineon Technologies, N-Channel 40V 240A (Tc) 380W (Tc) Surface Mount D2PAK (7-Lead), HEXFET®
View
PSMN1R2-25YL,115 Nexperia USA Inc., N-Channel 25V 100A (Tc) 121W (Tc) Surface Mount LFPAK56, Power-SO8,
View
STP6N95K5 STMicroelectronics, N-Channel 950V 9A (Tc) 90W (Tc) Through Hole TO-220-3, SuperMESH5™
View
IRFS4227TRLPBF Infineon Technologies, N-Channel 200V 62A (Tc) 330W (Tc) Surface Mount D2PAK, HEXFET®
View
IXTA15N50L2 IXYS, N-Channel 500V 15A (Tc) 300W (Tc) Surface Mount TO-263 (IXTA), Linear L2™
View
IXFN82N60P IXYS, N-Channel 600V 72A (Tc) 1040W (Tc) Chassis Mount SOT-227B, PolarHV™
View
IRFP450PBF Vishay Siliconix, N-Channel 500V 14A (Tc) 190W (Tc) Through Hole TO-247-3,
View
PSMN020-30MLCX Nexperia USA Inc., N-Channel 30V 31.8A (Tc) 33W (Tc) Surface Mount LFPAK33,
View
STU13N60M2 STMicroelectronics, N-Channel 600V 11A (Tc) 110W (Tc) Through Hole IPAK (TO-251), MDmesh™ II Plus
View
IPB60R125CPATMA1 Infineon Technologies, N-Channel 600V 25A (Tc) 208W (Tc) Surface Mount PG-TO263-3-2, CoolMOS™
View
DMN2028UVT-7 Diodes Incorporated, N-Channel 20V 6.2A (Ta) 1.2W (Ta) Surface Mount TSOT-26,
View
VN0550N3-G Microchip Technology, N-Channel 500V 50mA (Tj) 1W (Tc) Through Hole TO-92-3,
View
SIR882ADP-T1-GE3 - Tags
English
