Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR882ADP-T1-GE3

SIR882ADP-T1-GE3

SIR882ADP-T1-GE3

Part NumberSIR882ADP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 100V 60A PPAK SO-8

DatasheetSiR882ADP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 60A (Tc) 5.4W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIR882ADP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR882ADP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR882ADP-T1-GE3.
We are offering SIR882ADP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR882ADP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SiR882ADP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	8.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	60nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1975pF @ 50V
FET Feature	-
Power Dissipation (Max)	5.4W (Ta), 83W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIR882ADP-T1-GE3 - Related Products

	SIHH11N65EF-T1-GE3	Vishay Siliconix, N-Channel 650V 11A (Tc) 130W (Tc) Surface Mount PowerPAK® 8 x 8,	View
	AOD7S65	Alpha & Omega Semiconductor Inc., N-Channel 650V 7A (Tc) 89W (Tc) Surface Mount TO-252, (D-Pak), aMOS™	View
	DMN3032LE-13	Diodes Incorporated, N-Channel 30V 5.6A (Ta) 1.8W (Ta) Surface Mount SOT-223,	View
	TSM240N03CX6 RFG	Taiwan Semiconductor Corporation, N-Channel 30V 6.5A (Tc) 1.56W (Tc) Surface Mount SOT-26,	View
	PSMN7R5-30MLDX	Nexperia USA Inc., N-Channel 30V 57A (Tc) 45W (Tc) Surface Mount LFPAK33,	View
	IRFP260NPBF	Infineon Technologies, N-Channel 200V 50A (Tc) 300W (Tc) Through Hole TO-247AC, HEXFET®	View
	IRFP4468PBF	Infineon Technologies, N-Channel 100V 195A (Tc) 520W (Tc) Through Hole TO-247AC, HEXFET®	View
	STL7N6LF3	STMicroelectronics, N-Channel 60V 20A (Tc) 4.3W (Ta), 52W (Tc) Surface Mount PowerFlat™ (5x6), Automotive, AEC-Q101, STripFET™ F3	View
	PSMN1R4-30YLDX	Nexperia USA Inc., N-Channel 30V 100A (Tc) 166W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	IRFBC40ASPBF	Vishay Siliconix, N-Channel 600V 6.2A (Tc) 125W (Tc) Surface Mount D2PAK,	View
	STB19NF20	STMicroelectronics, N-Channel 200V 15A (Tc) 90W (Tc) Surface Mount D2PAK, MESH OVERLAY™	View
	IRFS3004TRLPBF	Infineon Technologies, N-Channel 40V 195A (Ta) 380W (Tc) Surface Mount D2PAK, HEXFET®	View

SIR882ADP-T1-GE3 - Tags

SIR882ADP-T1-GE3 SIR882ADP-T1-GE3 PDF SIR882ADP-T1-GE3 datasheet SIR882ADP-T1-GE3 specification SIR882ADP-T1-GE3 image SIR882ADP-T1-GE3 India Renesas Electronics India SIR882ADP-T1-GE3 buy SIR882ADP-T1-GE3 SIR882ADP-T1-GE3 price SIR882ADP-T1-GE3 distributor SIR882ADP-T1-GE3 supplier SIR882ADP-T1-GE3 wholesales