Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR882ADP-T1-GE3

SIR882ADP-T1-GE3

SIR882ADP-T1-GE3

Part NumberSIR882ADP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 100V 60A PPAK SO-8

DatasheetSiR882ADP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 60A (Tc) 5.4W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIR882ADP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR882ADP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR882ADP-T1-GE3.
We are offering SIR882ADP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR882ADP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SiR882ADP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	8.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	60nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1975pF @ 50V
FET Feature	-
Power Dissipation (Max)	5.4W (Ta), 83W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIR882ADP-T1-GE3 - Related Products

	FDB86566-F085	ON Semiconductor, N-Channel 60V 110A (Tc) 176W (Tj) Surface Mount D²PAK (TO-263AB), Automotive, AEC-Q101, PowerTrench®	View
	IRF1010EZSTRLP	Infineon Technologies, N-Channel 60V 75A (Tc) 140W (Tc) Surface Mount D2PAK, HEXFET®	View
	ZXMN6A08GTA	Diodes Incorporated, N-Channel 60V 3.8A (Ta) 2W (Ta) Surface Mount SOT-223,	View
	STH275N8F7-2AG	STMicroelectronics, N-Channel 80V 180A (Tc) 315W (Tc) Surface Mount H2Pak-2, Automotive, AEC-Q101, STripFET™ F7	View
	AO4406A	Alpha & Omega Semiconductor Inc., N-Channel 30V 13A (Ta) 3.1W (Ta) Surface Mount 8-SOIC,	View
	STH185N10F3-2	STMicroelectronics, N-Channel 100V 180A (Tc) 315W (Tc) Surface Mount H2Pak-2, Automotive, AEC-Q101, STripFET™ F3	View
	STS8N6LF6AG	STMicroelectronics, N-Channel 60V 8A (Ta) 3.2W (Ta) Surface Mount 8-SO, Automotive, AEC-Q101, STripFET™ F6	View
	PSMN4R6-60PS,127	Nexperia USA Inc., N-Channel 60V 100A (Tc) 211W (Tc) Through Hole TO-220AB,	View
	STD15NF10T4	STMicroelectronics, N-Channel 100V 23A (Tc) 70W (Tc) Surface Mount DPAK, STripFET™ II	View
	AUIRF1404Z	Infineon Technologies, N-Channel 40V 160A (Tc) 200W (Tc) Through Hole TO-220AB, HEXFET®	View
	PSMN019-100YLX	Nexperia USA Inc., N-Channel 100V 56A (Tc) 167W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	IRF1404STRLPBF	Infineon Technologies, N-Channel 40V 162A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount D2PAK, HEXFET®	View

SIR882ADP-T1-GE3 - Tags

SIR882ADP-T1-GE3 SIR882ADP-T1-GE3 PDF SIR882ADP-T1-GE3 datasheet SIR882ADP-T1-GE3 specification SIR882ADP-T1-GE3 image SIR882ADP-T1-GE3 India Renesas Electronics India SIR882ADP-T1-GE3 buy SIR882ADP-T1-GE3 SIR882ADP-T1-GE3 price SIR882ADP-T1-GE3 distributor SIR882ADP-T1-GE3 supplier SIR882ADP-T1-GE3 wholesales