Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ FDD5810-F085

FDD5810-F085

FDD5810-F085

Part NumberFDD5810-F085

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 60V 37A DPAK

DatasheetFDD5810_F085

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 7.4A (Ta), 37A (Tc) 72W (Tc) Surface Mount D-PAK (TO-252)

To learn about the specification of FDD5810-F085, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add FDD5810-F085 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of FDD5810-F085.
We are offering FDD5810-F085 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

FDD5810-F085 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	FDD5810_F085
Standard Package	2500
Manufacturer	ON Semiconductor
Series	Automotive, AEC-Q101, PowerTrench®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	7.4A (Ta), 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Rds On (Max) @ Id, Vgs	22mOhm @ 32A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	34nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1890pF @ 25V
FET Feature	-
Power Dissipation (Max)	72W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D-PAK (TO-252)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

FDD5810-F085 - Related Products

	IXFK64N50Q3	IXYS, N-Channel 500V 64A (Tc) 1000W (Tc) Through Hole TO-264AA (IXFK), HiPerFET™	View
	IRF7468TRPBF	Infineon Technologies, N-Channel 40V 9.4A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®	View
	NTLJF4156NTAG	ON Semiconductor, N-Channel 30V 2.5A (Tj) 710mW (Ta) Surface Mount 6-WDFN (2x2),	View
	TN0620N3-G	Microchip Technology, N-Channel 200V 250mA (Tj) 1W (Tc) Through Hole TO-92-3,	View
	IPB027N10N5ATMA1	Infineon Technologies, N-Channel 100V 120A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™	View
	IRF8714TRPBF	Infineon Technologies, N-Channel 30V 14A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®	View
	IRF6617TRPBF	Infineon Technologies, N-Channel 30V 14A (Ta), 55A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount DIRECTFET™ ST, HEXFET®	View
	DMN1019USN-13	Diodes Incorporated, N-Channel 12V 9.3A (Ta) 680mW (Ta) Surface Mount SC-59,	View
	SQ4064EY-T1_GE3	Vishay Siliconix, N-Channel 60V 12A (Tc) 6.8W (Tc) Surface Mount 8-SOIC, Automotive, AEC-Q101, TrenchFET®	View
	TSM2N7002KCX RFG	Taiwan Semiconductor Corporation, N-Channel 60V 300mA (Ta) 300mW (Ta) Surface Mount SOT-23,	View
	IRFS7537TRLPBF	Infineon Technologies, N-Channel 60V 173A (Tc) 230W (Tc) Surface Mount D²PAK (TO-263AB), HEXFET®, StrongIRFET™	View
	SPW55N80C3FKSA1	Infineon Technologies, N-Channel 800V 54.9A (Tc) 500W (Tc) Through Hole PG-TO247-3, CoolMOS™ C3	View

FDD5810-F085 - Tags

FDD5810-F085 FDD5810-F085 PDF FDD5810-F085 datasheet FDD5810-F085 specification FDD5810-F085 image FDD5810-F085 India Renesas Electronics India FDD5810-F085 buy FDD5810-F085 FDD5810-F085 price FDD5810-F085 distributor FDD5810-F085 supplier FDD5810-F085 wholesales