Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR836DP-T1-GE3

SIR836DP-T1-GE3

SIR836DP-T1-GE3

Part NumberSIR836DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 40V 21A PPAK SO-8

DatasheetSIR836DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 40V 21A (Tc) 3.9W (Ta), 15.6W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIR836DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR836DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR836DP-T1-GE3.
We are offering SIR836DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR836DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIR836DP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	19mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	18nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	600pF @ 20V
FET Feature	-
Power Dissipation (Max)	3.9W (Ta), 15.6W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIR836DP-T1-GE3 - Related Products

	IPB011N04NGATMA1	Infineon Technologies, N-Channel 40V 180A (Tc) 250W (Tc) Surface Mount PG-TO263-7-3, OptiMOS™	View
	RF4E110BNTR	Rohm Semiconductor, N-Channel 30V 11A (Ta) 2W (Ta) Surface Mount HUML2020L8,	View
	FDD8N50NZTM	ON Semiconductor, N-Channel 500V 6.5A (Tc) 90W (Tc) Surface Mount DPAK, UniFET-II™	View
	FDB86363-F085	ON Semiconductor, N-Channel 80V 110A (Tc) 300W (Tc) Surface Mount D²PAK (TO-263AB), Automotive, AEC-Q101, PowerTrench®	View
	STI6N62K3	STMicroelectronics, N-Channel 620V 5.5A (Tc) 90W (Tc) Through Hole I2PAK, SuperMESH3™	View
	IRFH7085TRPBF	Infineon Technologies, N-Channel 60V 100A (Tc) 156W (Tc) Surface Mount PQFN (5x6), StrongIRFET™	View
	STH240N75F3-6	STMicroelectronics, N-Channel 75V 180A (Tc) 300W (Tc) Surface Mount H2PAK-6, STripFET™ III	View
	FQP33N10	ON Semiconductor, N-Channel 100V 33A (Tc) 127W (Tc) Through Hole TO-220-3, QFET®	View
	FDS6294	ON Semiconductor, N-Channel 30V 13A (Ta) 3W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
	PMV100ENEAR	Nexperia USA Inc., N-Channel 30V 3A (Ta) 460mW (Ta), 4.5W (Tc) Surface Mount TO-236AB, Automotive, AEC-Q101	View
	BSS138P,215	Nexperia USA Inc., N-Channel 60V 360mA (Ta) 350mW (Ta), 1.14W (Tc) Surface Mount TO-236AB, Automotive, AEC-Q101, TrenchMOS™	View
	TSM70N380CP ROG	Taiwan Semiconductor Corporation, N-Channel 700V 11A (Tc) 125W (Tc) Surface Mount TO-252, (D-Pak),	View

SIR836DP-T1-GE3 - Tags

SIR836DP-T1-GE3 SIR836DP-T1-GE3 PDF SIR836DP-T1-GE3 datasheet SIR836DP-T1-GE3 specification SIR836DP-T1-GE3 image SIR836DP-T1-GE3 India Renesas Electronics India SIR836DP-T1-GE3 buy SIR836DP-T1-GE3 SIR836DP-T1-GE3 price SIR836DP-T1-GE3 distributor SIR836DP-T1-GE3 supplier SIR836DP-T1-GE3 wholesales