Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR836DP-T1-GE3

SIR836DP-T1-GE3

SIR836DP-T1-GE3

Part NumberSIR836DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 40V 21A PPAK SO-8

DatasheetSIR836DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 40V 21A (Tc) 3.9W (Ta), 15.6W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIR836DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR836DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR836DP-T1-GE3.
We are offering SIR836DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR836DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIR836DP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	19mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	18nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	600pF @ 20V
FET Feature	-
Power Dissipation (Max)	3.9W (Ta), 15.6W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIR836DP-T1-GE3 - Related Products

	SIR870ADP-T1-GE3	Vishay Siliconix, N-Channel 100V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	RCX450N20	Rohm Semiconductor, N-Channel 200V 45A (Tc) 2.23W (Ta), 40W (Tc) Through Hole TO-220FM,	View
	IPD90N04S403ATMA1	Infineon Technologies, N-Channel 40V 90A (Tc) 94W (Tc) Surface Mount PG-TO252-3-313, Automotive, AEC-Q101, OptiMOS™	View
	SI2312CDS-T1-GE3	Vishay Siliconix, N-Channel 20V 6A (Tc) 1.25W (Ta), 2.1W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	BVSS138LT1G	ON Semiconductor, N-Channel 50V 200mA (Ta) 225mW (Ta) Surface Mount SOT-23-3,	View
	BUK9614-60E,118	Nexperia USA Inc., N-Channel 60V 56A (Tc) 96W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	VMO580-02F	IXYS, N-Channel 200V 580A (Tc) Chassis Mount Y3-Li, HiPerFET™	View
	RD3P175SNTL1	Rohm Semiconductor, N-Channel 100V 17.5A (Ta) 20W (Tc) Surface Mount TO-252,	View
	VN2210N2	Microchip Technology, N-Channel 100V 1.7A (Tj) 360mW (Tc) Through Hole TO-39,	View
	SFT1445-TL-H	ON Semiconductor, N-Channel 100V 17A (Ta) 1W (Ta), 35W (Tc) Surface Mount TP-FA,	View
	IPD80R450P7ATMA1	Infineon Technologies, N-Channel 800V 11A (Tc) 73W (Tc) Surface Mount TO-252, CoolMOS™	View
	IRF1310NPBF	Infineon Technologies, N-Channel 100V 42A (Tc) 160W (Tc) Through Hole TO-220AB, HEXFET®	View

SIR836DP-T1-GE3 - Tags

SIR836DP-T1-GE3 SIR836DP-T1-GE3 PDF SIR836DP-T1-GE3 datasheet SIR836DP-T1-GE3 specification SIR836DP-T1-GE3 image SIR836DP-T1-GE3 India Renesas Electronics India SIR836DP-T1-GE3 buy SIR836DP-T1-GE3 SIR836DP-T1-GE3 price SIR836DP-T1-GE3 distributor SIR836DP-T1-GE3 supplier SIR836DP-T1-GE3 wholesales