PSMN8R5-100ESQ
PSMN8R5-100ESQ
Part Number PSMN8R5-100ESQ Description MOSFET N-CH 100V 100A I2PAK Package / Case TO-262-3 Long Leads, I²Pak, TO-262AAUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 100A (Tj) 263W (Tc) Through Hole I2PAK
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PSMN8R5-100ESQ - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet PSMN8R5-100ESQ Standard Package 50 Manufacturer Nexperia USA Inc. Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 100A (Tj) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 8.5mOhm @ 25A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 111nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5512pF @ 50V FET Feature - Power Dissipation (Max) 263W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package I2PAK Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
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