Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR812DP-T1-GE3

SIR812DP-T1-GE3

SIR812DP-T1-GE3

Part NumberSIR812DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 60A PPAK SO-8

DatasheetSiR812DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIR812DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR812DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR812DP-T1-GE3.
We are offering SIR812DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR812DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SiR812DP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.45mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	335nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	10240pF @ 15V
FET Feature	-
Power Dissipation (Max)	6.25W (Ta), 104W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIR812DP-T1-GE3 - Related Products

	STD4NK100Z	STMicroelectronics, N-Channel 1000V 2.2A (Tc) 90W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, SuperMESH™	View
	SUG90090E-GE3	Vishay Siliconix, N-Channel 200V 100A (Tc) 395W (Tc) Through Hole TO-247AC, ThunderFET®	View
	BSC076N06NS3GATMA1	Infineon Technologies, N-Channel 60V 50A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-5, OptiMOS™	View
	IRFIBF30GPBF	Vishay Siliconix, N-Channel 900V 1.9A (Tc) 35W (Tc) Through Hole TO-220-3,	View
	STL150N3LLH6	STMicroelectronics, N-Channel 30V 150A (Tc) 80W (Tc) Surface Mount PowerFlat™ (5x6), DeepGATE™, STripFET™ VI	View
	IPB020N10N5LFATMA1	Infineon Technologies, N-Channel 100V 120A (Tc) 313W (Tc) Surface Mount PG-TO263-3, OptiMOS™-5	View
	ZVN0545GTA	Diodes Incorporated, N-Channel 450V 140mA (Ta) 2W (Ta) Surface Mount SOT-223,	View
	PSMN6R0-30YL,115	Nexperia USA Inc., N-Channel 30V 79A (Tc) 55W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	AOT27S60L	Alpha & Omega Semiconductor Inc., N-Channel 600V 27A (Tc) 357W (Tc) Through Hole TO-220, aMOS™	View
	IRF7413ZTRPBF	Infineon Technologies, N-Channel 30V 13A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®	View
	R8008ANJFRGTL	Rohm Semiconductor, N-Channel 800V 8A (Tc) 195W (Tc) Surface Mount LPTS, Automotive, AEC-Q101	View
	PSMN075-100MSEX	Nexperia USA Inc., N-Channel 100V 18A (Tj) 65W (Tc) Surface Mount LFPAK33,	View

SIR812DP-T1-GE3 - Tags

SIR812DP-T1-GE3 SIR812DP-T1-GE3 PDF SIR812DP-T1-GE3 datasheet SIR812DP-T1-GE3 specification SIR812DP-T1-GE3 image SIR812DP-T1-GE3 India Renesas Electronics India SIR812DP-T1-GE3 buy SIR812DP-T1-GE3 SIR812DP-T1-GE3 price SIR812DP-T1-GE3 distributor SIR812DP-T1-GE3 supplier SIR812DP-T1-GE3 wholesales