Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR638DP-T1-GE3

SIR638DP-T1-GE3

SIR638DP-T1-GE3

Part NumberSIR638DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 40V 100A PPAK SO-8

DatasheetSiR638DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 40V 100A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIR638DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR638DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR638DP-T1-GE3.
We are offering SIR638DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR638DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SiR638DP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	0.88mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	204nC @ 10V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	10500pF @ 20V
FET Feature	-
Power Dissipation (Max)	104W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIR638DP-T1-GE3 - Related Products

	IXTA3N120TRL	IXYS, N-Channel 1200V 3A (Tc) 200W (Tc) Surface Mount TO-263 (IXTA),	View
	RFD14N05SM9A	ON Semiconductor, N-Channel 50V 14A (Tc) 48W (Tc) Surface Mount TO-252AA,	View
	IRFB4410ZGPBF	Infineon Technologies, N-Channel 100V 97A (Tc) 230W (Tc) Through Hole TO-220AB, HEXFET®	View
	IRFS3307TRLPBF	Infineon Technologies, N-Channel 75V 120A (Tc) 200W (Tc) Surface Mount D2PAK, HEXFET®	View
	SK8603160L	Panasonic Electronic Components, N-Channel 30V 22A (Ta), 70A (Tc) 2.8W (Ta), 28W (Tc) Surface Mount HSO8-F4-B,	View
	FDD8453LZ	ON Semiconductor, N-Channel 40V 16.4A (Ta), 50A (Tc) 3.1W (Ta), 65W (Tc) Surface Mount D-PAK (TO-252), PowerTrench®	View
	SQ2364EES-T1_GE3	Vishay Siliconix, N-Channel 60V 2A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236), Automotive, AEC-Q101, TrenchFET®	View
	FQP14N30	ON Semiconductor, N-Channel 300V 14.4A (Tc) 147W (Tc) Through Hole TO-220-3, QFET®	View
	FDD8447L	ON Semiconductor, N-Channel 40V 15.2A (Ta), 50A (Tc) 3.1W (Ta), 44W (Tc) Surface Mount D-PAK (TO-252), PowerTrench®	View
	2SK3541T2L	Rohm Semiconductor, N-Channel 30V 100mA (Ta) 150mW (Ta) Surface Mount VMT3,	View
	R6024KNJTL	Rohm Semiconductor, N-Channel 600V 24A (Tc) 245W (Tc) Surface Mount LPTS,	View
	NTMFS4C032NT1G	ON Semiconductor, N-Channel 30V 13A (Ta), 38A (Tc) 2.46W (Ta), 21.6W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),	View

SIR638DP-T1-GE3 - Tags

SIR638DP-T1-GE3 SIR638DP-T1-GE3 PDF SIR638DP-T1-GE3 datasheet SIR638DP-T1-GE3 specification SIR638DP-T1-GE3 image SIR638DP-T1-GE3 India Renesas Electronics India SIR638DP-T1-GE3 buy SIR638DP-T1-GE3 SIR638DP-T1-GE3 price SIR638DP-T1-GE3 distributor SIR638DP-T1-GE3 supplier SIR638DP-T1-GE3 wholesales