Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR610DP-T1-RE3

SIR610DP-T1-RE3

SIR610DP-T1-RE3

Part NumberSIR610DP-T1-RE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 200V 35.4A SO-8

DatasheetSIR610DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 200V 35.4A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIR610DP-T1-RE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR610DP-T1-RE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR610DP-T1-RE3.
We are offering SIR610DP-T1-RE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR610DP-T1-RE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIR610DP
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	ThunderFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	35.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	31.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	38nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1380pF @ 100V
FET Feature	-
Power Dissipation (Max)	104W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIR610DP-T1-RE3 - Related Products

	TK560P65Y,RQ	Toshiba Semiconductor and Storage, N-Channel 650V 7A (Tc) 60W (Tc) Surface Mount DPAK, DTMOSV	View
	PMZB390UNEYL	Nexperia USA Inc., N-Channel 30V 900mA (Ta) 350mW (Ta), 5.43W (Tc) Surface Mount DFN1006B-3,	View
	CSD17310Q5A	Texas Instruments, N-Channel 30V 21A (Ta), 100A (Tc) 3.1W (Ta) Surface Mount 8-VSONP (5x6), NexFET™	View
	STD134N4F7AG	STMicroelectronics, N-Channel 40V 80A (Tc) 134W (Tc) Surface Mount DPAK, STripFET™	View
	IPB60R360P7ATMA1	Infineon Technologies, N-Channel 600V 9A (Tc) 41W (Tc) Surface Mount D²PAK (TO-263AB), CoolMOS™ P7	View
	FDMS86350ET80	ON Semiconductor, N-Channel 80V 25A (Ta), 198A (Tc) 3.3W (Ta), 187W (Tc) Surface Mount Power56, PowerTrench®	View
	PSMN6R5-80PS,127	Nexperia USA Inc., N-Channel 80V 100A (Tc) 210W (Tc) Through Hole TO-220AB,	View
	BUK7610-100B,118	Nexperia USA Inc., N-Channel 100V 75A (Tc) 300W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	SSM3K344R,LF	Toshiba Semiconductor and Storage, N-Channel 20V 3A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVII-H	View
	SIR182DP-T1-RE3	Vishay Siliconix, N-Channel 60V 60A (Tc) 69.4W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV	View
	FDD86369-F085	ON Semiconductor, N-Channel 80V 90A (Tc) 150W (Tj) Surface Mount D-PAK (TO-252), Automotive, AEC-Q101, PowerTrench®	View
	APT34M120J	Microsemi Corporation, N-Channel 1200V 35A (Tc) 960W (Tc) Chassis Mount SOT-227,	View

SIR610DP-T1-RE3 - Tags

SIR610DP-T1-RE3 SIR610DP-T1-RE3 PDF SIR610DP-T1-RE3 datasheet SIR610DP-T1-RE3 specification SIR610DP-T1-RE3 image SIR610DP-T1-RE3 India Renesas Electronics India SIR610DP-T1-RE3 buy SIR610DP-T1-RE3 SIR610DP-T1-RE3 price SIR610DP-T1-RE3 distributor SIR610DP-T1-RE3 supplier SIR610DP-T1-RE3 wholesales