Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR606DP-T1-GE3

SIR606DP-T1-GE3

SIR606DP-T1-GE3

Part NumberSIR606DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 100V 37A POWERPAKSO

DatasheetSIR606DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 37A (Tc) 44.5W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIR606DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR606DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR606DP-T1-GE3.
We are offering SIR606DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR606DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIR606DP
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	37A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	16.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	22nC @ 6V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1360pF @ 50V
FET Feature	-
Power Dissipation (Max)	44.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIR606DP-T1-GE3 - Related Products

	STP35N60DM2	STMicroelectronics, N-Channel 600V 28A (Tc) 210W (Tc) Through Hole TO-220, MDmesh™ DM2	View
	BSZ0901NSIATMA1	Infineon Technologies, N-Channel 30V 25A (Ta), 40A (Tc) 2.1W (Ta), 69W (Tc) Surface Mount PG-TSDSON-8-FL, OptiMOS™	View
	FQT7N10TF	ON Semiconductor, N-Channel 100V 1.7A (Tc) 2W (Tc) Surface Mount SOT-223-4, QFET®	View
	SIB452DK-T1-GE3	Vishay Siliconix, N-Channel 190V 1.5A (Tc) 2.4W (Ta), 13W (Tc) Surface Mount PowerPAK® SC-75-6L Single, TrenchFET®	View
	IRL2910PBF	Infineon Technologies, N-Channel 100V 55A (Tc) 200W (Tc) Through Hole TO-220AB, HEXFET®	View
	DMN2011UTS-13	Diodes Incorporated, N-Channel 20V 21A (Tc) 1.3W (Ta) Surface Mount 8-TSSOP,	View
	SQP120N06-3M5L_GE3	Vishay Siliconix, N-Channel 60V 120A (Tc) 250W (Tc) Through Hole TO-220AB, Automotive, AEC-Q101, TrenchFET®	View
	IXFN80N50P	IXYS, N-Channel 500V 66A (Tc) 700W (Tc) Chassis Mount SOT-227B, PolarHV™	View
	FCP11N60F	ON Semiconductor, N-Channel 600V 11A (Tc) 125W (Tc) Through Hole TO-220-3, SuperFET™	View
	PSMN012-100YS,115	Nexperia USA Inc., N-Channel 100V 60A (Tc) 130W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	CPH3448-TL-W	ON Semiconductor, N-Channel 30V 4A (Ta) 1W (Ta) Surface Mount 3-CPH,	View
	STN4NF06L	STMicroelectronics, N-Channel 60V 4A (Tc) 3.3W (Tc) Surface Mount SOT-223, STripFET™ II	View

SIR606DP-T1-GE3 - Tags

SIR606DP-T1-GE3 SIR606DP-T1-GE3 PDF SIR606DP-T1-GE3 datasheet SIR606DP-T1-GE3 specification SIR606DP-T1-GE3 image SIR606DP-T1-GE3 India Renesas Electronics India SIR606DP-T1-GE3 buy SIR606DP-T1-GE3 SIR606DP-T1-GE3 price SIR606DP-T1-GE3 distributor SIR606DP-T1-GE3 supplier SIR606DP-T1-GE3 wholesales