Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR402DP-T1-GE3

SIR402DP-T1-GE3

SIR402DP-T1-GE3

Part NumberSIR402DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 35A PPAK SO-8

DatasheetSIR402DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 35A (Tc) 4.2W (Ta), 36W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIR402DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR402DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR402DP-T1-GE3.
We are offering SIR402DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR402DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIR402DP
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	42nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1700pF @ 15V
FET Feature	-
Power Dissipation (Max)	4.2W (Ta), 36W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIR402DP-T1-GE3 - Related Products

	TSM60NB190CF C0G	Taiwan Semiconductor Corporation, N-Channel 600V 18A (Tc) 59.5W (Tc) Through Hole ITO-220S,	View
	STL70N4LLF5	STMicroelectronics, N-Channel 40V 70A (Tc) 72W (Tc) Surface Mount PowerFlat™ (5x6), Automotive, AEC-Q101, STripFET™ V	View
	IRLML0100TRPBF	Infineon Technologies, N-Channel 100V 1.6A (Ta) 1.3W (Ta) Surface Mount Micro3™/SOT-23, HEXFET®	View
	AO4294	Alpha & Omega Semiconductor Inc., N-Channel 100V 11.5A (Ta) 3.1W (Ta) Surface Mount 8-SO,	View
	RFD3055LESM9A	ON Semiconductor, N-Channel 60V 11A (Tc) 38W (Tc) Surface Mount TO-252AA,	View
	IPB020N10N5LFATMA1	Infineon Technologies, N-Channel 100V 120A (Tc) 313W (Tc) Surface Mount PG-TO263-3, OptiMOS™-5	View
	NVTFS5C453NLWFTAG	ON Semiconductor, N-Channel 40V 107A (Tc) 68W (Tc) Surface Mount 8-WDFN (3.3x3.3),	View
	APT22F80B	Microsemi Corporation, N-Channel 800V 23A (Tc) 625W (Tc) Through Hole TO-247 [B],	View
	BSC032N04LSATMA1	Infineon Technologies, N-Channel 40V 21A (Ta), 98A (Tc) 2.5W (Ta), 52W (Tc) Surface Mount PG-TDSON-8-6, OptiMOS™	View
	DMT6016LFDF-7	Diodes Incorporated, N-Channel 60V 8.9A (Ta) 820mW (Ta) Surface Mount U-DFN2020-6 (Type F),	View
	STQ2HNK60ZR-AP	STMicroelectronics, N-Channel 600V 500mA (Tc) 3W (Tc) Through Hole TO-92-3, SuperMESH™	View
	IPD068N10N3GATMA1	Infineon Technologies, N-Channel 100V 90A (Tc) 150W (Tc) Surface Mount PG-TO252-3, OptiMOS™	View

SIR402DP-T1-GE3 - Tags

SIR402DP-T1-GE3 SIR402DP-T1-GE3 PDF SIR402DP-T1-GE3 datasheet SIR402DP-T1-GE3 specification SIR402DP-T1-GE3 image SIR402DP-T1-GE3 India Renesas Electronics India SIR402DP-T1-GE3 buy SIR402DP-T1-GE3 SIR402DP-T1-GE3 price SIR402DP-T1-GE3 distributor SIR402DP-T1-GE3 supplier SIR402DP-T1-GE3 wholesales