Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR401DP-T1-GE3

SIR401DP-T1-GE3

SIR401DP-T1-GE3

Part NumberSIR401DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 50A PPAK SO-8

DatasheetSIR401DP-T1-GE3

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 50A (Tc) 5W (Ta), 39W (Tc) Surface Mount

To learn about the specification of SIR401DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR401DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR401DP-T1-GE3.
We are offering SIR401DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR401DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIR401DP-T1-GE3
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
Rds On (Max) @ Id, Vgs	3.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	310nC @ 10V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	9080pF @ 10V
FET Feature	-
Power Dissipation (Max)	5W (Ta), 39W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8

SIR401DP-T1-GE3 - Related Products

	RD3H045SPTL1	Rohm Semiconductor, P-Channel 45V 4.5A (Ta) 15W (Tc) Surface Mount TO-252,	View
	TSM2305CX RFG	Taiwan Semiconductor Corporation, P-Channel 20V 3.2A (Ta) 1.25W (Ta) Surface Mount SOT-23,	View
	SIS443DN-T1-GE3	Vishay Siliconix, P-Channel 40V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	DMP3007SFG-7	Diodes Incorporated, P-Channel 30V 70A (Tc) 2.8W (Ta) Surface Mount PowerDI3333-8,	View
	SI7135DP-T1-GE3	Vishay Siliconix, P-Channel 30V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	VP2450N8-G	Microchip Technology, P-Channel 500V 160mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89),	View
	BSH202,215	Nexperia USA Inc., P-Channel 30V 520mA (Ta) 417mW (Ta) Surface Mount TO-236AB,	View
	SQ2361AEES-T1_GE3	Vishay Siliconix, P-Channel 60V 2.8A (Tc) 2W (Tc) Surface Mount, Automotive, AEC-Q101, TrenchFET®	View
	DMP3013SFV-7	Diodes Incorporated, P-Channel 30V 12A (Ta), 35A (Tc) 940mW (Ta) Surface Mount PowerDI3333-8 (Type UX),	View
	IXTP24P085T	IXYS, P-Channel 85V 24A (Tc) 83W (Tc) Through Hole TO-220AB, TrenchP™	View
	IRF9630PBF	Vishay Siliconix, P-Channel 200V 6.5A (Tc) 74W (Tc) Through Hole TO-220AB,	View
	SISH617DN-T1-GE3	Vishay Siliconix, P-Channel 30V 13.9A (Ta), 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH, TrenchFET®	View

SIR401DP-T1-GE3 - Tags

SIR401DP-T1-GE3 SIR401DP-T1-GE3 PDF SIR401DP-T1-GE3 datasheet SIR401DP-T1-GE3 specification SIR401DP-T1-GE3 image SIR401DP-T1-GE3 India Renesas Electronics India SIR401DP-T1-GE3 buy SIR401DP-T1-GE3 SIR401DP-T1-GE3 price SIR401DP-T1-GE3 distributor SIR401DP-T1-GE3 supplier SIR401DP-T1-GE3 wholesales