SIS427EDN-T1-GE3
SIS427EDN-T1-GE3
Part Number SIS427EDN-T1-GE3 Description MOSFET P-CH 30V 50A 1212-8 Package / Case PowerPAK® 1212-8Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 30V 50A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
To learn about the specification of SIS427EDN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIS427EDN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIS427EDN-T1-GE3.
We are offering SIS427EDN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SIS427EDN-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIS427EDN Standard Package 3000 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Tape & Reel (TR) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 10.6mOhm @ 11A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 66nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 1930pF @ 15V FET Feature - Power Dissipation (Max) 3.7W (Ta), 52W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8 Package / Case PowerPAK® 1212-8
SIS427EDN-T1-GE3 - Related ProductsMore >>
FDN304PZ ON Semiconductor, P-Channel 20V 2.4A (Ta) 500mW (Ta) Surface Mount SuperSOT-3, PowerTrench®
View
SIS407ADN-T1-GE3 Vishay Siliconix, P-Channel 20V 18A (Tc) 3.7W (Ta), 39.1W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®
View
ATP106-TL-H ON Semiconductor, P-Channel 40V 30A (Ta) 40W (Tc) Surface Mount ATPAK,
View
BSO301SPHXUMA1 Infineon Technologies, P-Channel 30V 12.6A (Ta) 1.79W (Ta) Surface Mount PG-DSO-8, OptiMOS™
View
FDS4685 ON Semiconductor, P-Channel 40V 8.2A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®
View
TPN4R712MD,L1Q Toshiba Semiconductor and Storage, P-Channel 20V 36A (Tc) 42W (Tc) Surface Mount 8-TSON Advance (3.3x3.3), U-MOSVI
View
RTR025P02TL Rohm Semiconductor, P-Channel 20V 2.5A (Ta) 1W (Ta) Surface Mount TSMT3,
View
SI7465DP-T1-E3 Vishay Siliconix, P-Channel 60V 3.2A (Ta) 1.5W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®
View
IXTH48P20P IXYS, P-Channel 200V 48A (Tc) 462W (Tc) Through Hole TO-247 (IXTH), PolarP™
View
NVGS5120PT1G ON Semiconductor, P-Channel 60V 1.8A (Ta) 600mW (Ta) Surface Mount 6-TSOP,
View
IRF9388TRPBF Infineon Technologies, P-Channel 30V 12A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®
View
IRLML6302TRPBF Infineon Technologies, P-Channel 20V 780mA (Ta) 540mW (Ta) Surface Mount Micro3™/SOT-23, HEXFET®
View
SIS427EDN-T1-GE3 - Tags
English
