Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIS427EDN-T1-GE3

SIS427EDN-T1-GE3

SIS427EDN-T1-GE3

Part NumberSIS427EDN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 30V 50A 1212-8

DatasheetSIS427EDN

Package / CasePowerPAK® 1212-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 30V 50A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

To learn about the specification of SIS427EDN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIS427EDN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIS427EDN-T1-GE3.
We are offering SIS427EDN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIS427EDN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIS427EDN
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	10.6mOhm @ 11A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	66nC @ 10V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	1930pF @ 15V
FET Feature	-
Power Dissipation (Max)	3.7W (Ta), 52W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8

SIS427EDN-T1-GE3 - Related Products

	AO3409	Alpha & Omega Semiconductor Inc., P-Channel 30V 2.6A (Ta) 1.4W (Ta) Surface Mount SOT-23-3L,	View
	SQS407ENW-T1_GE3	Vishay Siliconix, P-Channel 30V 16A (Tc) 62.5W (Tc) Surface Mount PowerPAK® 1212-8W, Automotive, AEC-Q101, TrenchFET®	View
	FDC610PZ	ON Semiconductor, P-Channel 30V 4.9A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6, PowerTrench®	View
	BVSS84LT1G	ON Semiconductor, P-Channel 50V 130mA (Ta) 225mW (Ta) Surface Mount SOT-23-3,	View
	IRF9Z34STRRPBF	Vishay Siliconix, P-Channel 60V 18A (Tc) 3.7W (Ta), 88W (Tc) Surface Mount D2PAK,	View
	SI2343DS-T1-GE3	Vishay Siliconix, P-Channel 30V 3.1A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	MCH3376-TL-W	ON Semiconductor, P-Channel 20V 1.5A (Ta) 800mW (Ta) Surface Mount 3-MCPH,	View
	IRFR6215TRPBF	Infineon Technologies, P-Channel 150V 13A (Tc) 110W (Tc) Surface Mount D-Pak, HEXFET®	View
	BUK6Y32-60PX	Nexperia USA Inc., P-Channel 60V 40A (Ta) 106W (Ta) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™	View
	IPD90P04P4L04ATMA1	Infineon Technologies, P-Channel 40V 90A (Tc) 125W (Tc) Surface Mount PG-TO252-3-313, OptiMOS™	View
	SI7117DN-T1-GE3	Vishay Siliconix, P-Channel 150V 2.17A (Tc) 3.2W (Ta), 12.5W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	IRFR5505TRPBF	Infineon Technologies, P-Channel 55V 18A (Tc) 57W (Tc) Surface Mount D-Pak, HEXFET®	View

SIS427EDN-T1-GE3 - Tags

SIS427EDN-T1-GE3 SIS427EDN-T1-GE3 PDF SIS427EDN-T1-GE3 datasheet SIS427EDN-T1-GE3 specification SIS427EDN-T1-GE3 image SIS427EDN-T1-GE3 India Renesas Electronics India SIS427EDN-T1-GE3 buy SIS427EDN-T1-GE3 SIS427EDN-T1-GE3 price SIS427EDN-T1-GE3 distributor SIS427EDN-T1-GE3 supplier SIS427EDN-T1-GE3 wholesales