Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR167DP-T1-GE3

SIR167DP-T1-GE3

SIR167DP-T1-GE3

Part NumberSIR167DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CHAN 30V POWERPAK SO-8

DatasheetSIR167DP Datasheet

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 30V 60A (Tc) 65.8W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIR167DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR167DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR167DP-T1-GE3.
We are offering SIR167DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR167DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIR167DP Datasheet
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen III
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	5.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	111nC @ 10V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	4380pF @ 15V
FET Feature	-
Power Dissipation (Max)	65.8W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIR167DP-T1-GE3 - Related Products

	PMN40ENEX	Nexperia USA Inc., N-Channel 30V 5.7A (Ta) 530mW (Ta), 4.46W (Tc) Surface Mount 6-TSOP,	View
	SQJ461EP-T1_GE3	Vishay Siliconix, P-Channel 60V 30A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
	IRFD9020PBF	Vishay Siliconix, P-Channel 60V 1.6A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP,	View
	ZXMP6A17KTC	Diodes Incorporated, P-Channel 60V 4.4A (Ta) 2.11W (Ta) Surface Mount TO-252-3,	View
	SIA811ADJ-T1-GE3	Vishay Siliconix, P-Channel 20V 4.5A (Tc) 1.8W (Ta), 6.5W (Tc) Surface Mount PowerPAK® SC-70-6 Dual, LITTLE FOOT®	View
	SI7655DN-T1-GE3	Vishay Siliconix, P-Channel 20V 40A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3), TrenchFET®	View
	SI3493DDV-T1-GE3	Vishay Siliconix, P-Channel 20V 8A (Tc) 3.6W (Tc) Surface Mount 6-TSOP, TrenchFET®	View
	IRF7606TRPBF	Infineon Technologies, P-Channel 30V 3.6A (Ta) 1.8W (Ta) Surface Mount Micro8™, HEXFET®	View
	FQPF47P06	ON Semiconductor, P-Channel 60V 30A (Tc) 62W (Tc) Through Hole TO-220F, QFET®	View
	SI2307BDS-T1-E3	Vishay Siliconix, P-Channel 30V 2.5A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	SI4465ADY-T1-E3	Vishay Siliconix, P-Channel 8V 3W (Ta), 6.5W (Tc) Surface Mount 8-SO, TrenchFET®	View
	RD3P130SPTL1	Rohm Semiconductor, P-Channel 100V 13A (Ta) 20W (Tc) Surface Mount TO-252,	View

SIR167DP-T1-GE3 - Tags

SIR167DP-T1-GE3 SIR167DP-T1-GE3 PDF SIR167DP-T1-GE3 datasheet SIR167DP-T1-GE3 specification SIR167DP-T1-GE3 image SIR167DP-T1-GE3 India Renesas Electronics India SIR167DP-T1-GE3 buy SIR167DP-T1-GE3 SIR167DP-T1-GE3 price SIR167DP-T1-GE3 distributor SIR167DP-T1-GE3 supplier SIR167DP-T1-GE3 wholesales