Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR167DP-T1-GE3

SIR167DP-T1-GE3

SIR167DP-T1-GE3

Part NumberSIR167DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CHAN 30V POWERPAK SO-8

DatasheetSIR167DP Datasheet

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 30V 60A (Tc) 65.8W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIR167DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR167DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR167DP-T1-GE3.
We are offering SIR167DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR167DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIR167DP Datasheet
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen III
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	5.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	111nC @ 10V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	4380pF @ 15V
FET Feature	-
Power Dissipation (Max)	65.8W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIR167DP-T1-GE3 - Related Products

	IRF9620STRLPBF	Vishay Siliconix, P-Channel 200V 3.5A (Tc) 3W (Ta), 40W (Tc) Surface Mount D2PAK,	View
	SSM3J35CT,L3F	Toshiba Semiconductor and Storage, P-Channel 20V 100mA (Ta) 100mW (Ta) Surface Mount CST3, π-MOSVI	View
	NTLUS3A40PZTBG	ON Semiconductor, P-Channel 20V 4A (Ta) 700mW (Ta) Surface Mount 6-UDFN (2x2), µCool™	View
	IXTA36P15P	IXYS, P-Channel 150V 36A (Tc) 300W (Tc) Surface Mount TO-263 (IXTA), PolarP™	View
	IXTX90P20P	IXYS, P-Channel 200V 90A (Tc) 890W (Tc) Through Hole PLUS247™-3, PolarP™	View
	BSP170PH6327XTSA1	Infineon Technologies, P-Channel 60V 1.9A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4, SIPMOS®	View
	SIUD401ED-T1-GE3	Vishay Siliconix, P-Channel 30V 500mA (Ta) 1.25W (Ta) Surface Mount PowerPAK® 0806, TrenchFET® Gen III	View
	SI1467DH-T1-GE3	Vishay Siliconix, P-Channel 20V 2.7A (Tc) 1.5W (Ta), 2.78W (Tc) Surface Mount SC-70-6 (SOT-363), TrenchFET®	View
	IRF9310TRPBF	Infineon Technologies, P-Channel 30V 20A (Tc) 2.5W (Ta) Surface Mount 8-SO, HEXFET®	View
	SI7113DN-T1-E3	Vishay Siliconix, P-Channel 100V 13.2A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	SSM6J215FE(TE85L,F	Toshiba Semiconductor and Storage, P-Channel 20V 3.4A (Ta) 500mW (Ta) Surface Mount ES6, U-MOSVI	View
	2SJ661-1E	ON Semiconductor, P-Channel 60V 38A (Ta) 1.65W (Ta), 65W (Tc) Through Hole TO-262-3,	View

SIR167DP-T1-GE3 - Tags

SIR167DP-T1-GE3 SIR167DP-T1-GE3 PDF SIR167DP-T1-GE3 datasheet SIR167DP-T1-GE3 specification SIR167DP-T1-GE3 image SIR167DP-T1-GE3 India Renesas Electronics India SIR167DP-T1-GE3 buy SIR167DP-T1-GE3 SIR167DP-T1-GE3 price SIR167DP-T1-GE3 distributor SIR167DP-T1-GE3 supplier SIR167DP-T1-GE3 wholesales