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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK9207-30B
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 31nC @ 5V
Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 3430pF @ 25V
FET Feature -
Power Dissipation (Max) 167W (Tc)
Operating Temperature -55°C ~ 185°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
IRFI840GLCPBF
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SIHH180N60E-T1-GE3
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BUK9Y19-100E,115
Nexperia USA Inc., N-Channel 100V 56A (Tc) 167W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™
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Microsemi Corporation, N-Channel 600V 94A (Tc) 833W (Tc) Through Hole 264 MAX™ [L2],
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Infineon Technologies, N-Channel 200V 72A (Tc) 375W (Tc) Surface Mount D²PAK (TO-263AB), Automotive, AEC-Q101, HEXFET®
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ON Semiconductor, N-Channel 100V 50A (Tc) 91W (Tc) Through Hole TO-220-3, PowerTrench®
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Vishay Siliconix, N-Channel 60V 800mA (Tc) 1W (Tc) Through Hole 4-DIP, Hexdip, HVMDIP,
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STMicroelectronics, N-Channel 650V 7A (Tc) 85W (Tc) Through Hole IPAK (TO-251), MDmesh™ II Plus
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PSMN8R7-80BS,118
Nexperia USA Inc., N-Channel 80V 90A (Tc) 170W (Tc) Surface Mount D2PAK,
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TN5335N8-G
Microchip Technology, N-Channel 350V 230mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89),
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