Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR106DP-T1-RE3

SIR106DP-T1-RE3

SIR106DP-T1-RE3

Part NumberSIR106DP-T1-RE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN 100V POWERPAK SO-8

DatasheetSIR106DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 16.1A (Ta), 65.8A (Tc) 3.2W (Ta), 83.3W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIR106DP-T1-RE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR106DP-T1-RE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR106DP-T1-RE3.
We are offering SIR106DP-T1-RE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR106DP-T1-RE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIR106DP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	16.1A (Ta), 65.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	64nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3610pF @ 50V
FET Feature	-
Power Dissipation (Max)	3.2W (Ta), 83.3W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIR106DP-T1-RE3 - Related Products

	SQD50N04-5M6L_GE3	Vishay Siliconix, N-Channel 40V 50A (Tc) 71W (Tc) Surface Mount TO-252AA, Automotive, AEC-Q101, TrenchFET®	View
	STF35N60DM2	STMicroelectronics, N-Channel 600V 28A (Tc) 40W (Tc) Through Hole TO-220FP, MDmesh™ DM2	View
	IRLR024TRPBF	Vishay Siliconix, N-Channel 60V 14A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak,	View
	IPD70R950CEAUMA1	Infineon Technologies, N-Channel 700V 7.4A (Tc) 68W (Tc) Surface Mount PG-TO252-3, CoolMOS™	View
	STP15NK50Z	STMicroelectronics, N-Channel 500V 14A (Tc) 160W (Tc) Through Hole TO-220AB, SuperMESH™	View
	IPB70N04S406ATMA1	Infineon Technologies, N-Channel 40V 70A (Tc) 58W (Tc) Surface Mount PG-TO263-3-2, OptiMOS™	View
	CSD19532KTT	Texas Instruments, N-Channel 100V 200A (Ta) 250W (Tc) Surface Mount DDPAK/TO-263-3, NexFET™	View
	IRFP360PBF	Vishay Siliconix, N-Channel 400V 23A (Tc) 280W (Tc) Through Hole TO-247-3,	View
	CSD19536KCS	Texas Instruments, N-Channel 100V 150A (Ta) 375W (Tc) Through Hole TO-220-3, NexFET™	View
	IRFP4310ZPBF	Infineon Technologies, N-Channel 100V 120A (Tc) 280W (Tc) Through Hole TO-247AC, HEXFET®	View
	NTMFS5H414NLT1G	ON Semiconductor, N-Channel 40V 35A (Ta), 210A (Tc) 3.1W (Ta), 110W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),	View
	RS1E170GNTB	Rohm Semiconductor, N-Channel 30V 17A (Ta) 3W (Ta), 23.7W (Tc) Surface Mount 8-HSOP,	View

SIR106DP-T1-RE3 - Tags

SIR106DP-T1-RE3 SIR106DP-T1-RE3 PDF SIR106DP-T1-RE3 datasheet SIR106DP-T1-RE3 specification SIR106DP-T1-RE3 image SIR106DP-T1-RE3 India Renesas Electronics India SIR106DP-T1-RE3 buy SIR106DP-T1-RE3 SIR106DP-T1-RE3 price SIR106DP-T1-RE3 distributor SIR106DP-T1-RE3 supplier SIR106DP-T1-RE3 wholesales