IAUT260N10S5N019ATMA1
IAUT260N10S5N019ATMA1
Part Number IAUT260N10S5N019ATMA1 Description MOSFET_(75V,120V( Package / Case 8-PowerSFNUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 260A (Tc) 300W (Tc) Surface Mount PG-HSOF-8-1
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IAUT260N10S5N019ATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IAUT260N10S5N019 Standard Package 2000 Manufacturer Infineon Technologies Series OptiMOS™-5 Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 260A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 1.9mOhm @ 100A, 10V Vgs(th) (Max) @ Id 3.8V @ 210µA Gate Charge (Qg) (Max) @ Vgs 166nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 11830pF @ 50V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-HSOF-8-1 Package / Case 8-PowerSFN
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