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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPB108N15N3 G,IPx111N15N3 G
Standard Package 1
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150V
Current - Continuous Drain (Id) @ 25°C 83A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Rds On (Max) @ Id, Vgs 10.8mOhm @ 83A, 10V
Vgs(th) (Max) @ Id 4V @ 160µA
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3230pF @ 75V
FET Feature -
Power Dissipation (Max) 214W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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STMicroelectronics, N-Channel 900V 5.8A (Tc) 30W (Tc) Through Hole TO-220FP, SuperMESH™
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IRFB31N20DPBF
Infineon Technologies, N-Channel 200V 31A (Tc) 3.1W (Ta), 200W (Tc) Through Hole TO-220AB, HEXFET®
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IRFP7430PBF
Infineon Technologies, N-Channel 40V 195A (Tc) 366W (Tc) Through Hole TO-247AC, HEXFET®, StrongIRFET™
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FDS6692A
ON Semiconductor, N-Channel 30V 9A (Ta) 1.47W (Ta) Surface Mount 8-SOIC, PowerTrench®
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BSS138-7-F
Diodes Incorporated, N-Channel 50V 200mA (Ta) 300mW (Ta) Surface Mount SOT-23-3,
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SIHH20N50E-T1-GE3
Vishay Siliconix, N-Channel 500V 22A (Tc) 174W (Tc) Surface Mount PowerPAK® 8 x 8,
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DMN3900UFA-7B
Diodes Incorporated, N-Channel 30V 550mA (Ta) 390mW (Ta) Surface Mount X2-DFN0806-3,
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BSS123-TP
Micro Commercial Co, N-Channel 100V 170mA 350mW Surface Mount SOT-23,
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IPAN50R500CEXKSA1
Infineon Technologies, N-Channel 500V 11.1A (Tc) 28W (Tc) Through Hole PG-TO220 Full Pack, CoolMOS™
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ON Semiconductor, N-Channel 60V 38A (Tc) 27W (Tc) Surface Mount DPAK (SINGLE GAUGE), Automotive, AEC-Q101
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IXFP22N65X2
IXYS, N-Channel 650V 22A (Tc) 390W (Tc) Through Hole TO-220, HiPerFET™
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