Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIJ494DP-T1-GE3

SIJ494DP-T1-GE3

SIJ494DP-T1-GE3

Part NumberSIJ494DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 150V 36.8A SO-8

DatasheetSIJ494DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 150V 36.8A (Tc) 69.4W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIJ494DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIJ494DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIJ494DP-T1-GE3.
We are offering SIJ494DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIJ494DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIJ494DP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	ThunderFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25°C	36.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	23.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	31nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1070pF @ 75V
FET Feature	-
Power Dissipation (Max)	69.4W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIJ494DP-T1-GE3 - Related Products

	DMTH43M8LPSQ-13	Diodes Incorporated, N-Channel 40V 22A (Ta), 100A (Tc) 2.7W (Ta) Surface Mount PowerDI5060-8, Automotive, AEC-Q101	View
	IRL530NPBF	Infineon Technologies, N-Channel 100V 17A (Tc) 79W (Tc) Through Hole TO-220AB, HEXFET®	View
	BSR606NH6327XTSA1	Infineon Technologies, N-Channel 60V 2.3A (Ta) 500mW (Ta) Surface Mount PG-SC-59, Automotive, AEC-Q101, OptiMOS™	View
	SPP17N80C3XKSA1	Infineon Technologies, N-Channel 800V 17A (Tc) 208W (Tc) Through Hole PG-TO220-3-1, CoolMOS™	View
	IPP041N12N3GXKSA1	Infineon Technologies, N-Channel 120V 120A (Tc) 300W (Tc) Through Hole PG-TO220-3, OptiMOS™	View
	ZXMN6A08E6QTA	Diodes Incorporated, N-Channel 60V 2.8A (Ta) 1.1W (Ta) Surface Mount SOT-26,	View
	ZXMN10A07FTA	Diodes Incorporated, N-Channel 100V 700mA (Ta) 625mW (Ta) Surface Mount SOT-23-3,	View
	FQPF20N06	ON Semiconductor, N-Channel 60V 15A (Tc) 30W (Tc) Through Hole TO-220F, QFET®	View
	SQJA88EP-T1_GE3	Vishay Siliconix, N-Channel 40V 30A (Tc) 48W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
	PMZB290UNE,315	Nexperia USA Inc., N-Channel 20V 1A (Ta) 360mW (Ta), 2.7W (Tc) Surface Mount DFN1006B-3,	View
	DMN3025LFV-13	Diodes Incorporated, N-Channel 30V 25A (Tc) 900mW (Ta) Surface Mount PowerDI3333-8 (Type UX), Automotive, AEC-Q101	View
	FQB33N10TM	ON Semiconductor, N-Channel 100V 33A (Tc) 3.75W (Ta), 127W (Tc) Surface Mount D²PAK (TO-263AB), QFET®	View

SIJ494DP-T1-GE3 - Tags

SIJ494DP-T1-GE3 SIJ494DP-T1-GE3 PDF SIJ494DP-T1-GE3 datasheet SIJ494DP-T1-GE3 specification SIJ494DP-T1-GE3 image SIJ494DP-T1-GE3 India Renesas Electronics India SIJ494DP-T1-GE3 buy SIJ494DP-T1-GE3 SIJ494DP-T1-GE3 price SIJ494DP-T1-GE3 distributor SIJ494DP-T1-GE3 supplier SIJ494DP-T1-GE3 wholesales