Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IPI086N10N3GXKSA1

IPI086N10N3GXKSA1

IPI086N10N3GXKSA1

Part NumberIPI086N10N3GXKSA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 100V 80A TO262-3

DatasheetIPx08xN10N3 G

Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 80A (Tc) 125W (Tc) Through Hole PG-TO262-3

To learn about the specification of IPI086N10N3GXKSA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPI086N10N3GXKSA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPI086N10N3GXKSA1.
We are offering IPI086N10N3GXKSA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IPI086N10N3GXKSA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPx08xN10N3 G
Standard Package	500
Manufacturer	Infineon Technologies
Series	OptiMOS™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	8.6mOhm @ 73A, 10V
Vgs(th) (Max) @ Id	3.5V @ 75µA
Gate Charge (Qg) (Max) @ Vgs	55nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3980pF @ 50V
FET Feature	-
Power Dissipation (Max)	125W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO262-3
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA

IPI086N10N3GXKSA1 - Related Products

	FDC655BN	ON Semiconductor, N-Channel 30V 6.3A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6, PowerTrench®	View
	TSM80N950CH C5G	Taiwan Semiconductor Corporation, N-Channel 800V 6A (Tc) 110W (Tc) Through Hole TO-251 (IPAK),	View
	IXFA14N85XHV	IXYS, N-Channel 850V 14A (Tc) 460W (Tc) Surface Mount TO-263 (IXFA), HiPerFET™	View
	IRFB31N20DPBF	Infineon Technologies, N-Channel 200V 31A (Tc) 3.1W (Ta), 200W (Tc) Through Hole TO-220AB, HEXFET®	View
	TSM4NB60CH C5G	Taiwan Semiconductor Corporation, N-Channel 600V 4A 50W (Tc) Through Hole TO-251 (IPAK),	View
	IRFS7730TRL7PP	Infineon Technologies, N-Channel 75V 240A (Tc) 375W (Tc) Surface Mount D2PAK (7-Lead), StrongIRFET™	View
	SIHB16N50C-E3	Vishay Siliconix, N-Channel 500V 16A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263),	View
	AUIRF8739L2TR	Infineon Technologies, N-Channel 40V 57A (Ta), 545A (Tc) 3.8W (Ta), 340W (Tc) Surface Mount DIRECTFET L8, HEXFET®	View
	NVHL072N65S3	ON Semiconductor, N-Channel 650V 44A (Tc) 312W (Tc) Through Hole TO-247-3,	View
	IPC50N04S55R8ATMA1	Infineon Technologies, N-Channel 40V 50A (Tc) 42W (Tc) Surface Mount PG-TDSON-8-33, OptiMOS™	View
	STL11N6F7	STMicroelectronics, N-Channel 60V 11A (Ta) 2.9W (Ta), 48W (Tc) Surface Mount PowerFlat™ (3.3x3.3), STripFET™	View
	RD3T050CNTL1	Rohm Semiconductor, N-Channel 200V 5A (Tc) 29W (Tc) Surface Mount TO-252,	View

IPI086N10N3GXKSA1 - Tags

IPI086N10N3GXKSA1 IPI086N10N3GXKSA1 PDF IPI086N10N3GXKSA1 datasheet IPI086N10N3GXKSA1 specification IPI086N10N3GXKSA1 image IPI086N10N3GXKSA1 India Renesas Electronics India IPI086N10N3GXKSA1 buy IPI086N10N3GXKSA1 IPI086N10N3GXKSA1 price IPI086N10N3GXKSA1 distributor IPI086N10N3GXKSA1 supplier IPI086N10N3GXKSA1 wholesales