Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIJ482DP-T1-GE3

SIJ482DP-T1-GE3

SIJ482DP-T1-GE3

Part NumberSIJ482DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 80V 60A PPAK SO-8

DatasheetSIJ482DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 80V 60A (Tc) 5W (Ta), 69.4W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIJ482DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIJ482DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIJ482DP-T1-GE3.
We are offering SIJ482DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIJ482DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIJ482DP
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	6.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	71nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2425pF @ 40V
FET Feature	-
Power Dissipation (Max)	5W (Ta), 69.4W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIJ482DP-T1-GE3 - Related Products

	STP7NK80Z	STMicroelectronics, N-Channel 800V 5.2A (Tc) 125W (Tc) Through Hole TO-220AB, SuperMESH™	View
	TSM8N80CZ C0G	Taiwan Semiconductor Corporation, N-Channel 800V 8A (Tc) 40.3W (Tc) Through Hole TO-220,	View
	R6030ENX	Rohm Semiconductor, N-Channel 600V 30A (Tc) 40W (Tc) Through Hole TO-220FM,	View
	PSMN019-100YLX	Nexperia USA Inc., N-Channel 100V 56A (Tc) 167W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	DMT36M1LPS-13	Diodes Incorporated, N-Channel 30V 65A (Tc) 2.6W (Ta) Surface Mount PowerDI5060-8,	View
	IPS80R1K2P7AKMA1	Infineon Technologies, N-Channel 800V 4.5A (Tc) 37W (Tc) Through Hole PG-TO251-3, CoolMOS™ P7	View
	FQU2N90TU-WS	ON Semiconductor, N-Channel 900V 1.7A (Tc) 2.5W (Ta), 50W (Tc) Through Hole I-PAK, QFET®	View
	IRF6668TRPBF	Infineon Technologies, N-Channel 80V 55A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MZ, HEXFET®	View
	STP18NM60ND	STMicroelectronics, N-Channel 600V 13A (Tc) 110W (Tc) Through Hole TO-220, FDmesh™ II	View
	IPZ40N04S55R4ATMA1	Infineon Technologies, N-Channel 40V 40A (Tc) 48W (Tc) Surface Mount PG-TSDSON-8, Automotive, AEC-Q101, OptiMOS™	View
	RSS095N05FU6TB	Rohm Semiconductor, N-Channel 45V 9.5A (Ta) 2W (Ta) Surface Mount 8-SOP,	View
	IXFN210N30P3	IXYS, N-Channel 300V 192A (Tc) 1500W (Tc) Chassis Mount SOT-227B, HiPerFET™, Polar3™	View

SIJ482DP-T1-GE3 - Tags

SIJ482DP-T1-GE3 SIJ482DP-T1-GE3 PDF SIJ482DP-T1-GE3 datasheet SIJ482DP-T1-GE3 specification SIJ482DP-T1-GE3 image SIJ482DP-T1-GE3 India Renesas Electronics India SIJ482DP-T1-GE3 buy SIJ482DP-T1-GE3 SIJ482DP-T1-GE3 price SIJ482DP-T1-GE3 distributor SIJ482DP-T1-GE3 supplier SIJ482DP-T1-GE3 wholesales