Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIJ186DP-T1-GE3

SIJ186DP-T1-GE3

SIJ186DP-T1-GE3

Part NumberSIJ186DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 60V PPAK SO-8L

DatasheetSIJ186DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 23A (Ta), 79.4A (Tc) 5W (Ta), 57W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIJ186DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIJ186DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIJ186DP-T1-GE3.
We are offering SIJ186DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIJ186DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIJ186DP
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	23A (Ta), 79.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	4.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	37nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1710pF @ 30V
FET Feature	-
Power Dissipation (Max)	5W (Ta), 57W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIJ186DP-T1-GE3 - Related Products

	FDD8770	ON Semiconductor, N-Channel 25V 35A (Tc) 115W (Tc) Surface Mount TO-252AA, PowerTrench®	View
	FCPF7N60NT	ON Semiconductor, N-Channel 600V 6.8A (Tc) 30.5W (Tc) Through Hole TO-220F, SupreMOS™	View
	IXFN24N100	IXYS, N-Channel 1000V 24A (Tc) 568W (Tc) Chassis Mount SOT-227B, HiPerFET™	View
	IPW60R060P7XKSA1	Infineon Technologies, N-Channel 600V 48A (Tc) 164W (Tc) Through Hole PG-TO247-3, CoolMOS™ P7	View
	ZVN3310FTA	Diodes Incorporated, N-Channel 100V 100mA (Ta) 330mW (Ta) Surface Mount SOT-23-3,	View
	IRLML6246TRPBF	Infineon Technologies, N-Channel 20V 4.1A (Ta) 1.3W (Ta) Surface Mount Micro3™/SOT-23, HEXFET®	View
	SI7434DP-T1-GE3	Vishay Siliconix, N-Channel 250V 2.3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	IRF7201TRPBF	Infineon Technologies, N-Channel 30V 7.3A (Tc) 2.5W (Tc) Surface Mount 8-SO, HEXFET®	View
	BUK9Y14-80E,115	Nexperia USA Inc., N-Channel 80V 62A (Tc) 147W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™	View
	TK20V60W5,LVQ	Toshiba Semiconductor and Storage, N-Channel 600V 20A (Ta) 156W (Tc) Surface Mount 4-DFN-EP (8x8), DTMOSIV	View
	BUK7Y3R0-40HX	Nexperia USA Inc., N-Channel 40V 120A (Ta) 172W (Ta) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101	View
	APT31M100L	Microsemi Corporation, N-Channel 1000V 32A (Tc) 1040W (Tc) Through Hole TO-264, POWER MOS 8™	View

SIJ186DP-T1-GE3 - Tags

SIJ186DP-T1-GE3 SIJ186DP-T1-GE3 PDF SIJ186DP-T1-GE3 datasheet SIJ186DP-T1-GE3 specification SIJ186DP-T1-GE3 image SIJ186DP-T1-GE3 India Renesas Electronics India SIJ186DP-T1-GE3 buy SIJ186DP-T1-GE3 SIJ186DP-T1-GE3 price SIJ186DP-T1-GE3 distributor SIJ186DP-T1-GE3 supplier SIJ186DP-T1-GE3 wholesales