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SIHU2N80E-GE3

SIHU2N80E-GE3

Part NumberSIHU2N80E-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 800V 2.8A IPAK

DatasheetSIHU2N80E

Package / CaseTO-251-3 Long Leads, IPak, TO-251AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 800V 2.8A (Tc) 62.5W (Tc) Through Hole IPAK (TO-251)

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SIHU2N80E-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHU2N80E
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	E
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25°C	2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2.75Ohm @ 1A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	19.6nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	315pF @ 100V
FET Feature	-
Power Dissipation (Max)	62.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	IPAK (TO-251)
Package / Case	TO-251-3 Long Leads, IPak, TO-251AB

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SIHU2N80E-GE3 - Tags

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