Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHU2N80E-GE3

SIHU2N80E-GE3

SIHU2N80E-GE3

Part NumberSIHU2N80E-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 800V 2.8A IPAK

DatasheetSIHU2N80E

Package / CaseTO-251-3 Long Leads, IPak, TO-251AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 800V 2.8A (Tc) 62.5W (Tc) Through Hole IPAK (TO-251)

To learn about the specification of SIHU2N80E-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHU2N80E-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHU2N80E-GE3.
We are offering SIHU2N80E-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHU2N80E-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHU2N80E
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	E
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25°C	2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2.75Ohm @ 1A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	19.6nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	315pF @ 100V
FET Feature	-
Power Dissipation (Max)	62.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	IPAK (TO-251)
Package / Case	TO-251-3 Long Leads, IPak, TO-251AB

SIHU2N80E-GE3 - Related Products

	R6030ENZ1C9	Rohm Semiconductor, N-Channel 600V 30A (Tc) 120W (Tc) Through Hole TO-247,	View
	SI7430DP-T1-GE3	Vishay Siliconix, N-Channel 150V 26A (Tc) 5.2W (Ta), 64W (Tc) Surface Mount PowerPAK® SO-8,	View
	SIJH440E-T1-GE3	Vishay Siliconix, N-Channel 40V 200A (Tc) 158W (Tc) Surface Mount PowerPAK® 8 x 8, TrenchFET® Gen IV	View
	SIRA22DP-T1-RE3	Vishay Siliconix, N-Channel 25V 60A (Tc) 83.3W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV	View
	SQJA68EP-T1_GE3	Vishay Siliconix, N-Channel 100V 14A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
	IPD90N03S4L02ATMA1	Infineon Technologies, N-Channel 30V 90A (Tc) 136W (Tc) Surface Mount PG-TO252-3, OptiMOS™	View
	RSS070N05FRATB	Rohm Semiconductor, N-Channel 45V 7A (Ta) 2W (Ta) Surface Mount 8-SOP, Automotive, AEC-Q101	View
	PMPB23XNEZ	Nexperia USA Inc., N-Channel 20V 7A (Ta) 1.7W (Ta) Surface Mount 6-DFN2020MD (2x2),	View
	TSM2N60ECP ROG	Taiwan Semiconductor Corporation, N-Channel 600V 2A (Tc) 52.1W (Tc) Surface Mount TO-252, (D-Pak),	View
	NDS7002A	ON Semiconductor, N-Channel 60V 280mA (Ta) 300mW (Ta) Surface Mount SOT-23 (TO-236AB),	View
	TSM025NB04LCR RLG	Taiwan Semiconductor Corporation, N-Channel 40V 24A (Ta), 161A (Tc) 3.1W (Ta), 136W (Tc) Surface Mount 8-PDFN (5x6),	View
	IPAW60R280CEXKSA1	Infineon Technologies, N-Channel 600V 19.3A (Tc) 32W (Tc) Through Hole PG-TO220 Full Pack, Wide Creepage, CoolMOS™	View

SIHU2N80E-GE3 - Tags

SIHU2N80E-GE3 SIHU2N80E-GE3 PDF SIHU2N80E-GE3 datasheet SIHU2N80E-GE3 specification SIHU2N80E-GE3 image SIHU2N80E-GE3 India Renesas Electronics India SIHU2N80E-GE3 buy SIHU2N80E-GE3 SIHU2N80E-GE3 price SIHU2N80E-GE3 distributor SIHU2N80E-GE3 supplier SIHU2N80E-GE3 wholesales