SIHU2N80E-GE3
SIHU2N80E-GE3
Part Number SIHU2N80E-GE3 Description MOSFET N-CH 800V 2.8A IPAK Package / Case TO-251-3 Long Leads, IPak, TO-251ABUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 800V 2.8A (Tc) 62.5W (Tc) Through Hole IPAK (TO-251)
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SIHU2N80E-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIHU2N80E Standard Package 3000 Manufacturer Vishay Siliconix Series E Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.75Ohm @ 1A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 19.6nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 315pF @ 100V FET Feature - Power Dissipation (Max) 62.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package IPAK (TO-251) Package / Case TO-251-3 Long Leads, IPak, TO-251AB
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