SIHJ7N65E-T1-GE3
SIHJ7N65E-T1-GE3
Part Number SIHJ7N65E-T1-GE3
Description MOSFET N-CH 650V POWERPAK SO-8L
Package / Case PowerPAK® SO-8
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 650V 7.9A (Tc) 96W (Tc) Surface Mount PowerPAK® SO-8
To learn about the specification of SIHJ7N65E-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHJ7N65E-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHJ7N65E-T1-GE3.
We are offering SIHJ7N65E-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SIHJ7N65E-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIHJ7N65E-T1-GE3
Standard Package 1
Manufacturer Vishay Siliconix
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 7.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 598mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 820pF @ 100V
FET Feature -
Power Dissipation (Max) 96W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
SIHJ7N65E-T1-GE3 - Related ProductsMore >>
VN4012L-G
Microchip Technology, N-Channel 400V 160mA (Tj) 1W (Tc) Through Hole TO-92-3,
View
IXTA3N120TRL
IXYS, N-Channel 1200V 3A (Tc) 200W (Tc) Surface Mount TO-263 (IXTA),
View
CSD18536KCS
Texas Instruments, N-Channel 60V 200A (Ta) 375W (Tc) Through Hole TO-220-3, NexFET™
View
DMT8012LSS-13
Diodes Incorporated, N-Channel 80V 9.7A (Ta) 1.5W (Ta) Surface Mount 8-SO, Automotive, AEC-Q101
View
IRF710STRLPBF
Vishay Siliconix, N-Channel 400V 2A (Tc) 3.1W (Ta), 36W (Tc) Surface Mount D2PAK,
View
HUF75345P3
ON Semiconductor, N-Channel 55V 75A (Tc) 325W (Tc) Through Hole TO-220-3, UltraFET™
View
TSM7ND60CI
Taiwan Semiconductor Corporation, N-Channel 600V 7A (Tc) 50W (Tc) Through Hole ITO-220,
View
DMN2050L-7
Diodes Incorporated, N-Channel 20V 5.9A (Ta) 1.4W (Ta) Surface Mount SOT-23-3,
View
STP6N90K5
STMicroelectronics, N-Channel 900V 6A (Tc) 110W (Tc) Through Hole TO-220, MDmesh™ K5
View
SI8824EDB-T2-E1
Vishay Siliconix, N-Channel 20V 500mW (Ta) Surface Mount 4-Microfoot, TrenchFET®
View
IPB60R199CPATMA1
Infineon Technologies, N-Channel 650V 16A (Tc) 139W (Tc) Surface Mount PG-TO263-3-2, CoolMOS™
View
STP80N10F7
STMicroelectronics, N-Channel 100V 80A (Tc) 110W (Tc) Through Hole TO-220, DeepGATE™, STripFET™ VII
View
SIHJ7N65E-T1-GE3 - Tags