Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHJ7N65E-T1-GE3

SIHJ7N65E-T1-GE3

SIHJ7N65E-T1-GE3

Part NumberSIHJ7N65E-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 650V POWERPAK SO-8L

DatasheetSIHJ7N65E-T1-GE3

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 7.9A (Tc) 96W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIHJ7N65E-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHJ7N65E-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHJ7N65E-T1-GE3.
We are offering SIHJ7N65E-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHJ7N65E-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHJ7N65E-T1-GE3
Standard Package	1
Manufacturer	Vishay Siliconix
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	7.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	598mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	44nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	820pF @ 100V
FET Feature	-
Power Dissipation (Max)	96W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIHJ7N65E-T1-GE3 - Related Products

	RTQ035N03TR	Rohm Semiconductor, N-Channel 30V 3.5A (Ta) 1.25W (Ta) Surface Mount TSMT6 (SC-95),	View
	BSC050N03LSGATMA1	Infineon Technologies, N-Channel 30V 18A (Ta), 80A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount PG-TDSON-8-5, OptiMOS™	View
	SI4168DY-T1-GE3	Vishay Siliconix, N-Channel 30V 24A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SO, TrenchFET®	View
	STW40N95K5	STMicroelectronics, N-Channel 950V 38A (Tc) 450W (Tc) Through Hole TO-247, MDmesh™ K5	View
	STF20N90K5	STMicroelectronics, N-Channel 900V 20A (Tc) 40W (Tc) Through Hole TO-220FP, MDmesh™ K5	View
	BUK7E3R1-40E,127	Nexperia USA Inc., N-Channel 40V 100A (Tc) 234W (Tc) Through Hole I2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	SI8416DB-T2-E1	Vishay Siliconix, N-Channel 8V 16A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-Micro Foot™ (1.5x1), TrenchFET®	View
	STU2N80K5	STMicroelectronics, N-Channel 800V 2A (Tc) 45W (Tc) Through Hole IPAK (TO-251), SuperMESH5™	View
	FK4B01120L1	Panasonic Electronic Components, N-Channel 12V 3.9A (Ta) 370mW (Ta) Surface Mount ULGA004-W-1010-RA01,	View
	STD5N80K5	STMicroelectronics, N-Channel 800V 4A (Tc) 60W (Tc) Surface Mount DPAK, MDmesh™	View
	FDD6N20TM	ON Semiconductor, N-Channel 200V 4.5A (Tc) 40W (Tc) Surface Mount D-Pak, UniFET™	View
	R6042JNZ4C13	Rohm Semiconductor, N-Channel 600V 42A (Tc) 495W (Tc) Through Hole TO-247G,	View

SIHJ7N65E-T1-GE3 - Tags

SIHJ7N65E-T1-GE3 SIHJ7N65E-T1-GE3 PDF SIHJ7N65E-T1-GE3 datasheet SIHJ7N65E-T1-GE3 specification SIHJ7N65E-T1-GE3 image SIHJ7N65E-T1-GE3 India Renesas Electronics India SIHJ7N65E-T1-GE3 buy SIHJ7N65E-T1-GE3 SIHJ7N65E-T1-GE3 price SIHJ7N65E-T1-GE3 distributor SIHJ7N65E-T1-GE3 supplier SIHJ7N65E-T1-GE3 wholesales