SIHJ240N60E-T1-GE3

Part NumberSIHJ240N60E-T1-GE3

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHJ240N60E
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	E
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	240mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	23nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	783pF @ 100V
FET Feature	-
Power Dissipation (Max)	89W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

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FDMC86520L	ON Semiconductor, N-Channel 60V 13.5A (Ta), 22A (Tc) 2.3W (Ta), 40W (Tc) Surface Mount 8-MLP (3.3x3.3), PowerTrench®	View
TPH3R003PL,LQ	Toshiba Semiconductor and Storage, N-Channel 30V 88A (Tc) 90W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSIX-H	View