Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHG80N60E-GE3

SIHG80N60E-GE3

SIHG80N60E-GE3

Part NumberSIHG80N60E-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 600V 80A TO247AC

DatasheetSIHG80N60E

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 80A (Tc) 520W (Tc) Through Hole TO-247AC

To learn about the specification of SIHG80N60E-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHG80N60E-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHG80N60E-GE3.
We are offering SIHG80N60E-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHG80N60E-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHG80N60E
Standard Package	500
Manufacturer	Vishay Siliconix
Series	E
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	30mOhm @ 40A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	443nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	6900pF @ 100V
FET Feature	-
Power Dissipation (Max)	520W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247AC
Package / Case	TO-247-3

SIHG80N60E-GE3 - Related Products

	VN2460N8-G	Microchip Technology, N-Channel 600V 200mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89),	View
	IRF2204PBF	Infineon Technologies, N-Channel 40V 210A (Tc) 330W (Tc) Through Hole TO-220AB, HEXFET®	View
	SQD100N03-3M4_GE3	Vishay Siliconix, N-Channel 30V 100A (Tc) 136W (Tc) Surface Mount TO-252AA, Automotive, AEC-Q101, TrenchFET®	View
	IPD60N10S4L12ATMA1	Infineon Technologies, N-Channel 100V 60A (Tc) 94W (Tc) Surface Mount PG-TO252-3-313, Automotive, AEC-Q101, HEXFET®	View
	CPC3703CTR	IXYS Integrated Circuits Division, N-Channel 250V 360mA (Ta) 1.1W (Ta) Surface Mount SOT-89-3,	View
	TSM5NC50CZ C0G	Taiwan Semiconductor Corporation, N-Channel 500V 5A (Tc) 89W (Tc) Through Hole TO-220,	View
	FDS5672	ON Semiconductor, N-Channel 60V 12A (Tc) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
	IXTA140N12T2	IXYS, N-Channel 120V 140A (Tc) 577W (Tc) Surface Mount TO-263 (IXTA), TrenchT2™	View
	FQD12N20TM	ON Semiconductor, N-Channel 200V 9A (Tc) 2.5W (Ta), 55W (Tc) Surface Mount D-Pak, QFET®	View
	SI4174DY-T1-GE3	Vishay Siliconix, N-Channel 30V 17A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SO, TrenchFET®	View
	SQ4064EY-T1_GE3	Vishay Siliconix, N-Channel 60V 12A (Tc) 6.8W (Tc) Surface Mount 8-SOIC, Automotive, AEC-Q101, TrenchFET®	View
	IRLR8256TRPBF	Infineon Technologies, N-Channel 25V 81A (Tc) 63W (Tc) Surface Mount D-Pak, HEXFET®	View

SIHG80N60E-GE3 - Tags

SIHG80N60E-GE3 SIHG80N60E-GE3 PDF SIHG80N60E-GE3 datasheet SIHG80N60E-GE3 specification SIHG80N60E-GE3 image SIHG80N60E-GE3 India Renesas Electronics India SIHG80N60E-GE3 buy SIHG80N60E-GE3 SIHG80N60E-GE3 price SIHG80N60E-GE3 distributor SIHG80N60E-GE3 supplier SIHG80N60E-GE3 wholesales