Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHG80N60E-GE3

SIHG80N60E-GE3

SIHG80N60E-GE3

Part NumberSIHG80N60E-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 600V 80A TO247AC

DatasheetSIHG80N60E

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 80A (Tc) 520W (Tc) Through Hole TO-247AC

To learn about the specification of SIHG80N60E-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHG80N60E-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHG80N60E-GE3.
We are offering SIHG80N60E-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHG80N60E-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHG80N60E
Standard Package	500
Manufacturer	Vishay Siliconix
Series	E
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	30mOhm @ 40A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	443nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	6900pF @ 100V
FET Feature	-
Power Dissipation (Max)	520W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247AC
Package / Case	TO-247-3

SIHG80N60E-GE3 - Related Products

	SQJA96EP-T1_GE3	Vishay Siliconix, N-Channel 80V 30A (Tc) 48W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
	STF16N65M2	STMicroelectronics, N-Channel 650V 11A (Tc) 25W (Tc) Through Hole TO-220FP, MDmesh™ M2	View
	IXTT12N150HV	IXYS, N-Channel 1500V 12A (Tc) 890W (Tc) Surface Mount TO-268,	View
	FK3503010L	Panasonic Electronic Components, N-Channel 30V 100mA (Ta) 150mW (Ta) Surface Mount SMini3-F2-B,	View
	SIR180DP-T1-RE3	Vishay Siliconix, N-Channel 60V 32.4A (Ta), 60A (Tc) 5.4W (Ta), 83.3W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV	View
	CSD18502Q5BT	Texas Instruments, N-Channel 40V 100A (Ta) 3.2W (Ta), 156W (Tc) Surface Mount 8-VSON-CLIP (5x6), NexFET™	View
	IXFQ94N30P3	IXYS, N-Channel 300V 94A (Tc) 1040W (Tc) Through Hole TO-3P, HiPerFET™, Polar3™	View
	HUF75645S3ST	ON Semiconductor, N-Channel 100V 75A (Tc) 310W (Tc) Surface Mount D²PAK (TO-263AB), UltraFET™	View
	CSD19505KTT	Texas Instruments, N-Channel 80V 200A (Ta) 300W (Tc) Surface Mount DDPAK/TO-263-3, NexFET™	View
	STL90N6F7	STMicroelectronics, N-Channel 60V 90A (Tc) 4.8W (Ta), 94W (Tc) Surface Mount PowerFlat™ (5x6), STripFET™ F7	View
	TK20V60W5,LVQ	Toshiba Semiconductor and Storage, N-Channel 600V 20A (Ta) 156W (Tc) Surface Mount 4-DFN-EP (8x8), DTMOSIV	View
	IRFS7430TRL7PP	Infineon Technologies, N-Channel 40V 240A (Tc) 375W (Tc) Surface Mount D2PAK (7-Lead), HEXFET®, StrongIRFET™	View

SIHG80N60E-GE3 - Tags

SIHG80N60E-GE3 SIHG80N60E-GE3 PDF SIHG80N60E-GE3 datasheet SIHG80N60E-GE3 specification SIHG80N60E-GE3 image SIHG80N60E-GE3 India Renesas Electronics India SIHG80N60E-GE3 buy SIHG80N60E-GE3 SIHG80N60E-GE3 price SIHG80N60E-GE3 distributor SIHG80N60E-GE3 supplier SIHG80N60E-GE3 wholesales