R6015KNX
R6015KNX
Part Number R6015KNX Description NCH 600V 15A POWER MOSFET Package / Case TO-220-3 Full PackUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 600V 15A (Tc) 60W (Tc) Through Hole TO-220FM
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R6015KNX - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet R6015KNX Standard Package 100 Manufacturer Rohm Semiconductor Series - Packaging Bulk Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 15A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 290mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 27.5nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1050pF @ 25V FET Feature - Power Dissipation (Max) 60W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220FM Package / Case TO-220-3 Full Pack
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IRFB7730PBF Infineon Technologies, N-Channel 75V 195A (Tc) 375W (Tc) Through Hole TO-220AB, HEXFET®
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TK5Q60W,S1VQ Toshiba Semiconductor and Storage, N-Channel 600V 5.4A (Ta) 60W (Tc) Through Hole I-PAK, DTMOSIV
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