NTMFS5832NLT1G

Part NumberNTMFS5832NLT1G

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	NTMFS5832NL
Standard Package	1
Manufacturer	ON Semiconductor
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	20A (Ta), 111A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	51nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2700pF @ 25V
FET Feature	-
Power Dissipation (Max)	3.1W (Ta), 96W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	5-DFN (5x6) (8-SOFL)
Package / Case	8-PowerTDFN, 5 Leads

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STB28N60DM2	STMicroelectronics, N-Channel 600V 21A (Tc) 170W (Tc) Surface Mount D2PAK, MDmesh™ DM2	View
BUK7611-55A,118	Nexperia USA Inc., N-Channel 55V 75A (Tc) 166W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
BSS123TA	Diodes Incorporated, N-Channel 100V 170mA (Ta) 360mW (Ta) Surface Mount SOT-23-3,	View
FDP030N06	ON Semiconductor, N-Channel 60V 120A (Tc) 231W (Tc) Through Hole TO-220-3, PowerTrench®	View