Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHG22N60E-GE3

SIHG22N60E-GE3

SIHG22N60E-GE3

Part NumberSIHG22N60E-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 600V 21A TO247AC

DatasheetSIHG22N60E

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 21A (Tc) 227W (Tc) Through Hole TO-247AC

To learn about the specification of SIHG22N60E-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHG22N60E-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHG22N60E-GE3.
We are offering SIHG22N60E-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHG22N60E-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHG22N60E
Standard Package	500
Manufacturer	Vishay Siliconix
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	86nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1920pF @ 100V
FET Feature	-
Power Dissipation (Max)	227W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247AC
Package / Case	TO-247-3

SIHG22N60E-GE3 - Related Products

	NTTFS6H850NTAG	ON Semiconductor, N-Channel 80V 11A (Ta), 68A (Tc) 3.2W (Ta), 107W (Tc) Surface Mount 8-WDFN (3.3x3.3),	View
	DMNH6042SK3Q-13	Diodes Incorporated, N-Channel 60V 25A (Tc) 2W (Ta) Surface Mount TO-252-4L, Automotive, AEC-Q101	View
	SI7178DP-T1-GE3	Vishay Siliconix, N-Channel 100V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	SI7190ADP-T1-RE3	Vishay Siliconix, N-Channel 250V 4.3A (Ta), 14.4A (Tc) 5W (Ta), 56.8W (Tc) Surface Mount PowerPAK® SO-8, ThunderFET®	View
	DMTH4004LK3Q-13	Diodes Incorporated, N-Channel 40V 100A (Tc) 3.9W (Ta), 180W (Tc) Surface Mount TO-252-4L, Automotive, AEC-Q101	View
	NTS4409NT1G	ON Semiconductor, N-Channel 25V 700mA (Ta) 280mW (Tj) Surface Mount SC-70-3 (SOT323),	View
	2N7002 TR	Central Semiconductor Corp, N-Channel 60V 115mA (Tc) 350mW (Ta) Surface Mount SOT-23,	View
	NTP6412ANG	ON Semiconductor, N-Channel 100V 58A (Tc) 167W (Tc) Through Hole TO-220AB,	View
	STD16N65M5	STMicroelectronics, N-Channel 650V 12A (Tc) 90W (Tc) Surface Mount DPAK, MDmesh™ V	View
	SIR638DP-T1-GE3	Vishay Siliconix, N-Channel 40V 100A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	IRFR024NTRLPBF	Infineon Technologies, N-Channel 55V 17A (Tc) 45W (Tc) Surface Mount D-Pak, HEXFET®	View
	2SK3564(STA4,Q,M)	Toshiba Semiconductor and Storage, N-Channel 900V 3A (Ta) 40W (Tc) Through Hole TO-220SIS, π-MOSIV	View

SIHG22N60E-GE3 - Tags

SIHG22N60E-GE3 SIHG22N60E-GE3 PDF SIHG22N60E-GE3 datasheet SIHG22N60E-GE3 specification SIHG22N60E-GE3 image SIHG22N60E-GE3 India Renesas Electronics India SIHG22N60E-GE3 buy SIHG22N60E-GE3 SIHG22N60E-GE3 price SIHG22N60E-GE3 distributor SIHG22N60E-GE3 supplier SIHG22N60E-GE3 wholesales