SIHD3N50D-GE3
SIHD3N50D-GE3
Part Number SIHD3N50D-GE3 Description MOSFET N-CH 500V 3A TO252 DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 500V 3A (Tc) 69W (Tc) Surface Mount TO-252AA
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SIHD3N50D-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIHD3N50D Standard Package 3000 Manufacturer Vishay Siliconix Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 3A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.2Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 175pF @ 100V FET Feature - Power Dissipation (Max) 69W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252AA Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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