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SIHD3N50D-GE3

SIHD3N50D-GE3

Part NumberSIHD3N50D-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 500V 3A TO252 DPAK

DatasheetSIHD3N50D

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 500V 3A (Tc) 69W (Tc) Surface Mount TO-252AA

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SIHD3N50D-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHD3N50D
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25°C	3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	3.2Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	175pF @ 100V
FET Feature	-
Power Dissipation (Max)	69W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252AA
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

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