SQS460ENW-T1_GE3
SQS460ENW-T1_GE3
Part Number SQS460ENW-T1_GE3 Description MOSFET N-CH 60V AEC-Q101 1212-8W Package / Case PowerPAK® 1212-8WUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 60V 8A (Tc) 39W (Tc) Surface Mount PowerPAK® 1212-8W
To learn about the specification of SQS460ENW-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQS460ENW-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQS460ENW-T1_GE3.
We are offering SQS460ENW-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SQS460ENW-T1_GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SQS460ENW Standard Package 3000 Manufacturer Vishay Siliconix Series * Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 36mOhm @ 5.3A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 755pF @ 25V FET Feature - Power Dissipation (Max) 39W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8W Package / Case PowerPAK® 1212-8W
SQS460ENW-T1_GE3 - Related ProductsMore >>
IXFA10N60P IXYS, N-Channel 600V 10A (Tc) 200W (Tc) Surface Mount TO-263 (IXFA), HiPerFET™, PolarP2™
View
FQB50N06TM ON Semiconductor, N-Channel 60V 50A (Tc) 3.75W (Ta), 120W (Tc) Surface Mount D²PAK (TO-263AB), QFET®
View
DMN3016LK3-13 Diodes Incorporated, N-Channel 30V 12.4A (Ta) 1.6W (Ta) Surface Mount TO-252,
View
IPP60R070CFD7XKSA1 Infineon Technologies, N-Channel 650V 31A (Tc) 156W (Tc) Through Hole PG-TO220-3, CoolMOS™ CFD7
View
TSM1N80CW RPG Taiwan Semiconductor Corporation, N-Channel 800V 300mA (Ta) 2.1W (Tc) Surface Mount SOT-223,
View
FCMT299N60 ON Semiconductor, N-Channel 600V 12A (Ta) 125W (Tc) Surface Mount Power88, SuperFET® II
View
FQP6N90C ON Semiconductor, N-Channel 900V 6A (Tc) 167W (Tc) Through Hole TO-220-3, QFET®
View
SPA08N80C3XKSA1 Infineon Technologies, N-Channel 800V 8A (Tc) 40W (Tc) Through Hole PG-TO220-FP, CoolMOS™
View
FCH023N65S3L4 ON Semiconductor, N-Channel 650V 75A (Tc) 595W (Tc) Through Hole TO-247, SuperFET® III
View
FQD6N40CTM ON Semiconductor, N-Channel 400V 4.5A (Tc) 2.5W (Ta), 48W (Tc) Surface Mount D-Pak, QFET®
View
RJK005N03T146 Rohm Semiconductor, N-Channel 30V 500mA (Ta) 200mW (Ta) Surface Mount SMT3,
View
MMBF170Q-7-F Diodes Incorporated, N-Channel 60V 500mA (Ta) 300mW (Ta) Surface Mount SOT-23-3,
View
SQS460ENW-T1_GE3 - Tags
English
