Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHD2N80E-GE3

SIHD2N80E-GE3

SIHD2N80E-GE3

Part NumberSIHD2N80E-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 800V 2.8A DPAK

DatasheetSIHD2N80E

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 800V 2.8A (Tc) 62.5W (Tc) Surface Mount D-PAK (TO-252AA)

To learn about the specification of SIHD2N80E-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHD2N80E-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHD2N80E-GE3.
We are offering SIHD2N80E-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHD2N80E-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHD2N80E
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	E
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25°C	2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2.75Ohm @ 1A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	19.6nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	315pF @ 100V
FET Feature	-
Power Dissipation (Max)	62.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D-PAK (TO-252AA)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

SIHD2N80E-GE3 - Related Products

	IPZA60R037P7XKSA1	Infineon Technologies, N-Channel 600V 76A (Tc) 255W (Tc) Through Hole PG-TO247-4, CoolMOS™ P7	View
	IRF740STRLPBF	Vishay Siliconix, N-Channel 400V 10A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount D2PAK,	View
	SISA14DN-T1-GE3	Vishay Siliconix, N-Channel 30V 20A (Tc) 3.57W (Ta), 26.5W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	RSU002N06T106	Rohm Semiconductor, N-Channel 60V 250mA (Ta) 200mW (Ta) Surface Mount UMT3,	View
	FDD850N10L	ON Semiconductor, N-Channel 100V 15.7A (Tc) 50W (Tc) Surface Mount DPAK, PowerTrench®	View
	DMN2300UFB4-7B	Diodes Incorporated, N-Channel 20V 1.3A (Ta) 500mW (Ta) Surface Mount X2-DFN1006-3,	View
	IPB017N06N3GATMA1	Infineon Technologies, N-Channel 60V 180A (Tc) 250W (Tc) Surface Mount PG-TO263-7, OptiMOS™	View
	SI4430BDY-T1-GE3	Vishay Siliconix, N-Channel 30V 14A (Ta) 1.6W (Ta) Surface Mount 8-SO, TrenchFET®	View
	BUK7M12-60EX	Nexperia USA Inc., N-Channel 60V 53A (Tc) 75W (Tc) Surface Mount LFPAK33, Automotive, AEC-Q101	View
	IRF6674TRPBF	Infineon Technologies, N-Channel 60V 13.4A (Ta), 67A (Tc) 3.6W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MZ, HEXFET®	View
	PSMN013-100YSEX	Nexperia USA Inc., N-Channel 100V 82A (Tj) 238W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	IRFR224TRPBF	Vishay Siliconix, N-Channel 250V 3.8A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak,	View

SIHD2N80E-GE3 - Tags

SIHD2N80E-GE3 SIHD2N80E-GE3 PDF SIHD2N80E-GE3 datasheet SIHD2N80E-GE3 specification SIHD2N80E-GE3 image SIHD2N80E-GE3 India Renesas Electronics India SIHD2N80E-GE3 buy SIHD2N80E-GE3 SIHD2N80E-GE3 price SIHD2N80E-GE3 distributor SIHD2N80E-GE3 supplier SIHD2N80E-GE3 wholesales