Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ RQ3E080BNTB

RQ3E080BNTB

RQ3E080BNTB

Part NumberRQ3E080BNTB

ManufacturerRohm Semiconductor

DescriptionMOSFET N-CH 30V 8A HSMT8

DatasheetRQ3E080BN

Package / Case8-PowerVDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 8A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)

To learn about the specification of RQ3E080BNTB, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add RQ3E080BNTB with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of RQ3E080BNTB.
We are offering RQ3E080BNTB for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

RQ3E080BNTB - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	RQ3E080BN
Standard Package	1
Manufacturer	Rohm Semiconductor
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	15.2mOhm @ 8A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	14.5nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	660pF @ 15V
FET Feature	-
Power Dissipation (Max)	2W (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-HSMT (3.2x3)
Package / Case	8-PowerVDFN

RQ3E080BNTB - Related Products

	BSC026NE2LS5ATMA1	Infineon Technologies, N-Channel 25V 24A (Ta), 82A (Tc) 2.5W (Ta), 29W (Tc) Surface Mount PG-TDSON-8-7, OptiMOS™	View
	IRL3705ZSTRLPBF	Infineon Technologies, N-Channel 55V 75A (Tc) 130W (Tc) Surface Mount D2PAK, HEXFET®	View
	STU9HN65M2	STMicroelectronics, N-Channel 650V 5.5A (Tc) 60W (Tc) Through Hole I-PAK, MDmesh™ M2	View
	MTD3055V	ON Semiconductor, N-Channel 60V 12A (Ta) 3.9W (Ta), 48W (Tc) Surface Mount TO-252-3,	View
	PSMN6R5-80BS,118	Nexperia USA Inc., N-Channel 80V 100A (Tc) 210W (Tc) Surface Mount D2PAK,	View
	BSS123,215	Nexperia USA Inc., N-Channel 100V 150mA (Ta) 250mW (Ta) Surface Mount TO-236AB, TrenchMOS™	View
	IRFS4310ZTRLPBF	Infineon Technologies, N-Channel 100V 120A (Tc) 250W (Tc) Surface Mount D2PAK, HEXFET®	View
	IRL8113PBF	Infineon Technologies, N-Channel 30V 105A (Tc) 110W (Tc) Through Hole TO-220AB, HEXFET®	View
	STW9N80K5	STMicroelectronics, N-Channel 800V 7A (Tc) 110W (Tc) Through Hole TO-247, MDmesh™ K5	View
	R6004JNJGTL	Rohm Semiconductor, N-Channel 600V 4A (Tc) 60W (Tc) Surface Mount LPTS (D2PAK),	View
	TSM130NB06LCR RLG	Taiwan Semiconductor Corporation, N-Channel 60V 10A (Ta), 51A (Tc) 3.1W (Ta), 83W (Tc) Surface Mount 8-PDFN (5x6),	View
	BSB013NE2LXIXUMA1	Infineon Technologies, N-Channel 25V 36A (Ta), 163A (Tc) 2.8W (Ta), 57W (Tc) Surface Mount MG-WDSON-2, CanPAK M™, OptiMOS™	View

RQ3E080BNTB - Tags

RQ3E080BNTB RQ3E080BNTB PDF RQ3E080BNTB datasheet RQ3E080BNTB specification RQ3E080BNTB image RQ3E080BNTB India Renesas Electronics India RQ3E080BNTB buy RQ3E080BNTB RQ3E080BNTB price RQ3E080BNTB distributor RQ3E080BNTB supplier RQ3E080BNTB wholesales