Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHD1K4N60E-GE3

SIHD1K4N60E-GE3

SIHD1K4N60E-GE3

Part NumberSIHD1K4N60E-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH DPAK TO-252

DatasheetSIHD1K4N60E

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 4.2A (Tc) 63W (Tc) Surface Mount TO-252AA

To learn about the specification of SIHD1K4N60E-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHD1K4N60E-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHD1K4N60E-GE3.
We are offering SIHD1K4N60E-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHD1K4N60E-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHD1K4N60E
Standard Package	2000
Manufacturer	Vishay Siliconix
Series	E
Packaging	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	4.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.45Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	7.5nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	172pF @ 100V
FET Feature	-
Power Dissipation (Max)	63W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252AA
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

SIHD1K4N60E-GE3 - Related Products

	FDD1600N10ALZ	ON Semiconductor, N-Channel 100V 6.8A (Tc) 14.9W (Tc) Surface Mount TO-252, (D-Pak), PowerTrench®	View
	IPA65R190CFDXKSA1	Infineon Technologies, N-Channel 650V 17.5A (Tc) 34W (Tc) Through Hole PG-TO220 Full Pack, CoolMOS™	View
	TSM240N03CX RFG	Taiwan Semiconductor Corporation, N-Channel 30V 6.5A (Tc) 1.56W (Tc) Surface Mount SOT-23,	View
	FQB50N06LTM	ON Semiconductor, N-Channel 60V 52.4A (Tc) 3.75W (Ta), 121W (Tc) Surface Mount D²PAK (TO-263AB), QFET®	View
	BUK9615-100A,118	Nexperia USA Inc., N-Channel 100V 75A (Tc) 230W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	FDMS8460	ON Semiconductor, N-Channel 40V 25A (Ta), 49A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®	View
	DMN2990UFZ-7B	Diodes Incorporated, N-Channel 20V 250mA (Ta) 320mW (Ta) Surface Mount X2-DFN0606-3,	View
	RCX511N25	Rohm Semiconductor, N-Channel 250V 51A (Tc) 2.23W (Ta), 40W (Tc) Through Hole TO-220FM,	View
	IRFR210TRRPBF	Vishay Siliconix, N-Channel 200V 2.6A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak,	View
	FCPF11N60NT	ON Semiconductor, N-Channel 600V 10.8A (Tc) 32.1W (Tc) Through Hole TO-220F, SuperMOS™	View
	FCMT250N65S3	ON Semiconductor, N-Channel 650V 12A (Tc) 90W (Tc) Surface Mount Power88, SuperFET® III	View
	PSMN015-100B,118	Nexperia USA Inc., N-Channel 100V 75A (Tc) 300W (Tc) Surface Mount D2PAK, TrenchMOS™	View

SIHD1K4N60E-GE3 - Tags

SIHD1K4N60E-GE3 SIHD1K4N60E-GE3 PDF SIHD1K4N60E-GE3 datasheet SIHD1K4N60E-GE3 specification SIHD1K4N60E-GE3 image SIHD1K4N60E-GE3 India Renesas Electronics India SIHD1K4N60E-GE3 buy SIHD1K4N60E-GE3 SIHD1K4N60E-GE3 price SIHD1K4N60E-GE3 distributor SIHD1K4N60E-GE3 supplier SIHD1K4N60E-GE3 wholesales