Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHD1K4N60E-GE3

SIHD1K4N60E-GE3

SIHD1K4N60E-GE3

Part NumberSIHD1K4N60E-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH DPAK TO-252

DatasheetSIHD1K4N60E

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 4.2A (Tc) 63W (Tc) Surface Mount TO-252AA

To learn about the specification of SIHD1K4N60E-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHD1K4N60E-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHD1K4N60E-GE3.
We are offering SIHD1K4N60E-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHD1K4N60E-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHD1K4N60E
Standard Package	2000
Manufacturer	Vishay Siliconix
Series	E
Packaging	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	4.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.45Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	7.5nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	172pF @ 100V
FET Feature	-
Power Dissipation (Max)	63W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252AA
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

SIHD1K4N60E-GE3 - Related Products

	IPP65R110CFDAAKSA1	Infineon Technologies, N-Channel 650V 31.2A (Tc) 277.8W (Tc) Through Hole PG-TO220-3, Automotive, AEC-Q101, CoolMOS™	View
	STP15N60M2-EP	STMicroelectronics, N-Channel 600V 11A (Tc) 110W (Tc) Through Hole TO-220, MDmesh™ M2-EP	View
	IRFR320TRLPBF	Vishay Siliconix, N-Channel 400V 3.1A (Tc) 42W (Tc) Surface Mount D-Pak,	View
	TSM130NB06CR RLG	Taiwan Semiconductor Corporation, N-Channel 60V 10A (Ta), 51A (Tc) 3.1W (Ta), 83W (Tc) Surface Mount 8-PDFN (5x6),	View
	IPB033N10N5LFATMA1	Infineon Technologies, N-Channel 100V 120A (Tc) 179W (Tc) Surface Mount PG-TO263-3, OptiMOS™-5	View
	SI3424BDV-T1-GE3	Vishay Siliconix, N-Channel 30V 8A (Tc) 2.1W (Ta), 2.98W (Tc) Surface Mount 6-TSOP, TrenchFET®	View
	FDMS86200DC	ON Semiconductor, N-Channel 150V 9.3A (Ta), 28A (Tc) 3.2W (Ta), 125W (Tc) Surface Mount Dual Cool™56, Dual Cool™, PowerTrench®	View
	IRF300P226	Infineon Technologies, Through Hole TO-247AC,	View
	NTMFS6H801NT1G	ON Semiconductor, N-Channel 80V 23A (Ta), 157A (Tc) 3.8W (Ta), 166W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),	View
	2N7002WT1G	ON Semiconductor, N-Channel 60V 310mA (Ta) 280mW (Tj) Surface Mount SC-70-3 (SOT323),	View
	SIHF7N60E-E3	Vishay Siliconix, N-Channel 600V 7A (Tc) 31W (Tc) Through Hole TO-220 Full Pack,	View
	SI7820DN-T1-GE3	Vishay Siliconix, N-Channel 200V 1.7A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®	View

SIHD1K4N60E-GE3 - Tags

SIHD1K4N60E-GE3 SIHD1K4N60E-GE3 PDF SIHD1K4N60E-GE3 datasheet SIHD1K4N60E-GE3 specification SIHD1K4N60E-GE3 image SIHD1K4N60E-GE3 India Renesas Electronics India SIHD1K4N60E-GE3 buy SIHD1K4N60E-GE3 SIHD1K4N60E-GE3 price SIHD1K4N60E-GE3 distributor SIHD1K4N60E-GE3 supplier SIHD1K4N60E-GE3 wholesales